Abstract:With the increasing number of ion qubits and improving performance of sophisticated quantum algorithms, more and more scalable complex ion trap electrodes have been developed and integrated. Nonlinear ion shuttling operations at the junction are more frequently used, such as in the areas of separation, merging, and exchanging. Several studies have been conducted to optimize the geometries of the radio-frequency (RF) electrodes to generate ideal trapping electric fields with a lower junction barrier and an even ion height of the RF saddle points. However, this iteration is time-consuming and commonly accompanied by complicated and sharp electrode geometry. Therefore, high-accuracy fabrication process and high electric breakdown voltage are essential. In the current work, an effective method was proposed to reduce the junction's pseudo-potential barrier and ion height variation by setting several individual RF electrodes and adjusting each RF voltage amplitude without changing the geometry of the electrode structure. The simulation results show that this method shows the same effect on engineering the trapping potential and reducing the potential barrier, but requires fewer parameters and optimization time. By combining this method with the geometrical shape-optimizing, the pseudo-potential barrier and the ion height variation near the junction can be further reduced. In addition, the geometry of the electrodes can be simplified to relax the fabrication precision and keep the ability to engineer the trapping electric field in real-time even after the fabrication of the electrodes, which provides a potential all-electric degree of freedom for the design and control of the two-dimensional ion crystals and investigation of their phase transition.

Design, Fabrication and Characterization of Surface Electrode Ion Trap Integrated with TSV

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Electrothermal modelling of through silicon via (TSV) interconnects

Demonstration of a microfabricated surface electrode ion trap

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

(k,m)-Catalan Numbers and Hook Length Polynomials for Plane Trees

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Ion Trapping with a Laser-written 3D Miniaturized Monolithic Linear Paul Trap for Microcavity Integration

Fabrication of Microchannel Embedded Tsv Interposer and Its Influence on Tsv'S Electrical Parameters

Surface trap with dc-tunable ion-electrode distance

Heating rate and electrode charging measurements in a scalable, microfabricated, surface-electrode ion trap

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation

Cooperative engineering the multiple radio-frequency fields to reduce the X-junction barrier for ion trap chips

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Heterogeneous Integration of MEMS Sensor Array and CMOS Readout IC with Through Silicon Via Interconnects

Functional surface ion traps on a 12-inch glass wafer for quantum applications

Multi-junction surface ion trap for quantum computing

CU seed, CMP process development and via resistance extraction in through silicon via technology

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating