Abstract:The scalability of surface electrode ion traps has been progressively improved with the on-chip integration of conventional bulk components. Based on the development of through-silicon-via (TSV)-integrated ion trap, in this work, we further simplify the back-end assembly process by patterning a redistribution layer (RDL) onto a customized ceramic pin grid array (C-CPGA) package. This RDL has an internal connection with a CPGA pin on the back side, rerouting the electrical signal and facilitating the direct bonding of the TSV trap and CPGA. The patterned neighboring RDL has an averaged resistance of $4.5\times 10^{12}\,\Omega $ , three orders of magnitude higher than that of the TSV trap itself. As compared to the previous assembly (glass interposer wire bonded to a conventional CPGA), a small parasitic capacitance increase of 0.1 pF of the C-CPGA is observed. Radio frequency (RF) electrical tests indicate that the trap on C-CPGA will not induce additional power loss. Meanwhile, due to the high thermal conductivity of ceramic materials, the heat dissipation capability of C-CPGA is boosted. The functionality of the TSV trap on C-CPGA is also demonstrated by trapping and laser cooling the 88Sr $^{+}$ ions. The measured heating rate (21 quanta per millisecond for an axial frequency of 300 kHz) is comparable with the trap assembled in the previous approach. This indicates that the CPGA with built-in RDL is fully compatible with ion trapping applications, providing a new approach toward compact, flexible, and robust ion trap assembly.

Demonstration of a microfabricated surface electrode ion trap

Surface trap with dc-tunable ion-electrode distance

Industrially Microfabricated Ion Trap with 1 eV Trap Depth

Design Considerations and Fabrication Challenges of Surface Electrode Ion Trap with TSV Integration

Heating rate and electrode charging measurements in a scalable, microfabricated, surface-electrode ion trap

Fabrication and Characterization of Surface Electrode Ion Trap for Quantum Computing

(k,m)-Catalan Numbers and Hook Length Polynomials for Plane Trees

Surface-Electrode Ion Trap with Ground Structures for Minimizing the Dielectric Loss in the Si Substrate

Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation

Phoenix and Peregrine Ion Traps

Multi-junction surface ion trap for quantum computing

Design, Fabrication and Characterization of Surface Electrode Ion Trap Integrated with TSV

Experimental investigation of planar ion traps

Electron impact ionization loading of a surface electrode ion trap

Fabrication of Surface Ion Traps with Integrated Current Carrying Wires enabling High Magnetic Field Gradients

Monolithic Microfabricated Symmetric Ion Trap for Quantum Information Processing

Design and Development of Single-Qubit Ion Trap on Glass and Si Substrates with RF Analysis and Performance Benchmarking

Simplified Assembly of Through-Silicon-Via Integrated Ion Traps

Large‐Scale Fabrication of Surface Ion Traps on a 300 Mm Glass Wafer

RF Performance Benchmarking of TSV Integrated Surface Electrode Ion Trap for Quantum Computing

Ion Trapping with a Laser-written 3D Miniaturized Monolithic Linear Paul Trap for Microcavity Integration