Abstract:Conservationists often have difficulty obtaining financial and social support for protected areas that do not demonstrate their benefits for society. Therefore, ecosystem services have gained importance in conservation science in the last decade, as these services provide further justification for appropriate management and conservation of natural systems. We used InVEST software and a set of GIS procedures to quantify, spatialize and evaluated the overlap between ecosystem services—carbon stock and sediment retention—and a biodiversity proxy–habitat quality. In addition, we proposed a method that serves as an initial approach of a priority areas selection process. The method considers the synergism between ecosystem services and biodiversity conservation. Our study region is the Iron Quadrangle, an important Brazilian mining province and a conservation priority area located in the interface of two biodiversity hotspots, the Cerrado and Atlantic Forest biomes. The resultant priority area for the maintenance of the highest values of ecosystem services and habitat quality was about 13% of the study area. Among those priority areas, 30% are already within established strictly protected areas, and 12% are in sustainable use protected areas. Following the transparent and highly replicable method we proposed in this study, conservation planners can better determine which areas fulfill multiple goals and can locate the trade-offs in the landscape. We also gave a step towards the improvement of the habitat quality model with a topography parameter. In areas of very rugged topography, we have to consider geomorfometric barriers for anthropogenic impacts and for species movement and we must think beyond the linear distances. Moreover, we used a model that considers the tree mortality caused by edge effects in the estimation of carbon stock. We found low spatial congruence among the modeled services, mostly because of the pattern of sediment retention distribution.

Improved Performance of MoS2 Negative-Capacitance Transistors by Using Hf1-xAlxOy As Gate Dielectric Plus NH3-Plasma Treatment

[Changes in granulation tissue fibroblasts during the healing of gunshot wounds (experimental research)].

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2

Ecosystem Services Modeling as a Tool for Defining Priority Areas for Conservation

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Optimization of Subthreshold Swing and Hysteresis in Hf 0.5 Zr 0.5 O 2 -Based MoS 2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Improved Performance of MoS2 FETs using AlN/Al2 O3 dielectric and Plasma Enhanced Atomic Layer Deposition (PEALD)

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

Improved Device Performance of MoTe2 Nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric

High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric