Abstract:Boltzmann distribution thermal tails of carriers restrain the subthreshold swing (SS) of field-effect transistors (FETs) to be lower than 60 mV/decade at room temperature, which restrains the reduction of operate-voltage and power consumption of transistors. The negative-capacitance FET (NC FET) is expected to break through this physical limit and obtain a steep SS by amplifying the gate voltage through the negative capacitance effect of the ferroelectric thin film, providing a new way to further reduce the power consumption of the transistor at the end of Moore's law. Here, we show a MoS2 NC FET with a CuInP2S6 ferroelectric, exhibiting a large on/off ratio of 108, a steep SS as low as 6 mV/decade, and a wide sub-60 mV/decade drain current range of more than 4 orders of magnitude while sacrificially inducing a huge hysteresis larger than 500 mV. Furthermore, we found that by inserting the h-phase boron nitride (h-BN) layer with suitable thickness, the dielectric capacitance matches the ferroelectric negative capacitance better, and thus the hysteresis on the transfer curve is reduced, and the ideal switching-behavior transistors with SS as low as 62 mV/decade and only 5 mV negligible hysteresis were obtained. Our work demonstrates that under the capacitance-matching condition, the hysteresis-free negative-capacitance transistors do not act as the predicted steep-slope transistors, but their voltage-saving still occurs instead as a type of effective transconductance booster with more than 20 times transconductance amplification.

Optimization of Subthreshold Swing and Hysteresis in Hf 0.5 Zr 0.5 O 2 -Based MoS 2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Impacts of HfZrO thickness and anneal temperature on performance of MoS2negative-capacitance field-effect transistors

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Ferroelectric Negative Capacitance GeSn PFETs with Sub-20 Mv/decade Subthreshold Swing

Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrO x

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3

Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs

Negative Capacitance Oxide Thin-Film Transistor with Sub-60 Mv/decade Subthreshold Swing

Negative Capacitance GaN HEMT with Improved Subthreshold Swing and Transconductance