Abstract:III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse (gate-lag), which inevitably limits the device performances and reliability. Here, we fabricate an optimized AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT), by using HfZrOx (HZO) as a gate dielectric, that can improve the interfacial and transport properties. Compared to the conventional high permittivity (high-kappa) gate dielectric HfO2 which has attracted wide attention in recent years, the concentrations of interface traps and the inside fixed oxide defects are obviously reduced by using high quality HZO layer. Through the dielectric engineering of HZO, the MOS-HEMT with HZO dielectric shows an enhanced DC output performance with an increase of 54% at the optimal working condition, which is indeed much higher than that of the HfO2 MOS-HEMT (40%). And the HZO MOS-HEMT exhibits a higher I-on/I-off ratio of 10(6), an excellent subthreshold swing (SS) of 85 mV/decade, and a higher voltage swing (GVS). The gate leakage is reduced by nearly 8 orders of magnitude compared to the conventional unpassivated HEMTs (conv. HEMT) at the gate voltage of -5 V. These results are mainly caused by the replacement of the low-height Schottky barrier (SB) and the reduction of interface traps density. In order to further investigate the interfacial and electric properties of HZO MOS-HEMT, the dynamic gate/drain voltage and high-frequency capacitance-voltage (C-V) measurements are both applied. Remarkably, no measurable current collapse and C-V hysteresis are clearly observed, showing the enhanced interfacial and electric performances of the MOS-HEMT with dielectric engineering of HZO.

Negative Capacitance GaN HEMT with Improved Subthreshold Swing and Transconductance

Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrO x

Ferroelectric Negative Capacitance GeSn PFETs with Sub-20 Mv/decade Subthreshold Swing

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

Comparative Study of Negative Capacitance Ge Pfets with HfZrO X Partially and Fully Covering Gate Region

Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx

Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs

Optimization of Subthreshold Swing and Hysteresis in Hf 0.5 Zr 0.5 O 2 -Based MoS 2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

Impacts of HfZrO thickness and anneal temperature on performance of MoS2negative-capacitance field-effect transistors

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Effects of the Variation of ${v}_{\text {GS}}$ Sweep Range on the Performance of Negative Capacitance FETs

Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs

Improving Rf Characteristic and Suppress Gate Leakage in Normally-Off Gan-Hemts Using Negative Polarization Effect and Floating Gate for Millimeter-Wave Systems

Performance Analysis of III-V and IV Semiconductors Based Double Gate Hetero Material Negative Capacitance TFET

Antiferroelectric Negative Capacitance Transistor for Low Power Consumption

A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free