Abstract:Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric materials is proposed in order to address this physical limitation of CMOS technology. A polarization destabilization in ferroelectrics causes an effective negative permittivity, resulting in a differential voltage amplification and a reduced subthreshold swing when integrated into the gate stack of a transistor. Recent demonstrations of negative capacitance concerned mainly n-type MOSFETs and their subthreshold slope. An effective technology booster should be capable of improving the performance of both n- and p-type transistors. In this work, we report a significant enhancement in both digital (subthreshold swing, on-current over off-current ratio, and overdrive) and analog (transconductance and current efficiency factor) FoM of commercial 28nm CMOS process by exploiting a PZT capacitor as the negative capacitance booster. Accordingly, a sub-thermal swing down to 10 mV/decade together with an enhanced current efficiency factor up to 10$^5$ V$^{-1}$ is obtained in both n- and p-type MOSFETs at room temperature. The overdrive voltage is enhanced up to 0.45 V, leading to a supply voltage reduction of 50\%.

Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs

Comparative Study of Negative Capacitance Ge Pfets with HfZrO X Partially and Fully Covering Gate Region

Negative Differential Resistance in Negative Capacitance FETs

Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate

Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrO x

Frequency Dependence of Performance in Ge Negative Capacitance PFETs Achieving Sub-30 Mv/decade Swing and 110 Mv Hysteresis at MHz

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Effects of the Variation of ${v}_{\text {GS}}$ Sweep Range on the Performance of Negative Capacitance FETs

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Ferroelectric Negative Capacitance GeSn PFETs with Sub-20 Mv/decade Subthreshold Swing

Negative Capacitance GaN HEMT with Improved Subthreshold Swing and Transconductance

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs

Experimental Study on the Transient Response of Negative Capacitance Tunnel FET