Abstract:The current evaluation on negative capacitance ferroelectric MOSFET (NC-FeFET) mostly reports device-level current/capacitance-voltage prediction and approaches with ease of integration in SPICE for circuit level performance prediction are very limited. For benchmarking against intrinsic MOSFET and beyond-CMOS devices, a new Landau-Khalatnikov theory-based SPICE model of ferroelectric is presented as a series connectionof a voltage controlled voltage source and a resistor. It predicts both static and dynamic behaviors by including ferroelectric damping constant. Integration of this ferroelectric model with BSIM4 model of 45-nm CMOS technology allows prediction of circuit-level performance of NC-FeEFT. In currentvoltage characteristics, both subthreshold swing and off-state current are reduced compared with intrinsic MOSFET. For an inverter chain, different values of damping constants give rise to a wide range of propagation delays and power consumptions. Only NC-FeFET using sufficiently low damping constant ferroelectric with similar response time to intrinsic MOSFET can be considered as a low-power device with a similar propagation delay. In this case, its dynamic power is suppressed by the same proportion as that of internal voltage amplification and static leakage power also drops. Our results reveal the ferroelectricswitching time and Landau parameter requirements for FeFET use in low-power circuit applications.

Frequency Dependence of Performance in Ge Negative Capacitance PFETs Achieving Sub-30 Mv/decade Swing and 110 Mv Hysteresis at MHz

Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrO x

Comparative Study of Negative Capacitance Ge Pfets with HfZrO X Partially and Fully Covering Gate Region

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx

Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs

Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate

Ferroelectric Negative Capacitance GeSn PFETs with Sub-20 Mv/decade Subthreshold Swing

Effects of the Variation of ${v}_{\text {GS}}$ Sweep Range on the Performance of Negative Capacitance FETs

Negative Differential Resistance in Negative Capacitance FETs

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 Mv/decade Subthreshold Swing, Negligible Hysteresis, and Improved Ids

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

Negative Capacitance GaN HEMT with Improved Subthreshold Swing and Transconductance

Experimental Study on the Transient Response of Negative Capacitance Tunnel FET

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain