Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 Mv/decade Subthreshold Swing, Negligible Hysteresis, and Improved Ids

Jiuren Zhou,Genquan Han,Qinglong Li,Yue Peng,Xiaoli Lu,Chunfu Zhang,Jincheng Zhang,Qing-Qing Sun,David Wei Zhang,Yue Hao
DOI: https://doi.org/10.1109/iedm.2016.7838401
2016-01-01
Abstract:We report the first ferroelectric (FE) HfZrO x (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40~43 mV/decade), negligible hysteresis, and enhanced Ids. With a RTA at 450 o C, FE devices with reduced hysteresis of 40~60 mV demonstrate the significantly improved SS and I ds characteristics compared to control devices without FE, owing to the negative capacitance (NC) effect induced by HZO. FE Ge and GeSn pFETs achieve 22% and 20% I ds enhancement than control devices, respectively, at the drive voltage of 1.0 V. NC effect in FE devices is proved by the gate leakage and inversion capacitance characteristics.
What problem does this paper attempt to address?