MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors

Seunguk Song,Kwan-Ho Kim,Srikrishna Chakravarthi,Zirun Han,Gwangwoo Kim,Kyung Yeol Ma,Hyeon Suk Shin,Roy H. Olsson III,Deep Jariwala

2023-08-01

Abstract:Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characteristics of a MoS$_{2}$ negative capacitance FET (NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate the effect of a dielectric layer in the gate stack on the memory window and subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of transfer characteristics in the NCFET can be minimized with the inclusion of a non-ferroelectric dielectric layer, which fulfills the capacitance-matching condition. Remarkably, we also observe the NC effect in MoS$_{2}$/AlScN NCFETs arrays based on large-area monolayer MoS$_{2}$ synthesized by chemical vapor deposition, showing the SS values smaller than its thermionic limit (~36-60 mV/dec) and minimal variation in threshold voltages (< 20 mV).

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

### What problem does this paper attempt to solve?

This paper primarily explores how to achieve Field-Effect Transistors (FETs) with Negative Capacitance (NC) effect by introducing aluminum scandium nitride (AlScN) ferroelectric material into the gate stack. Specifically, the paper attempts to address the following issues:

1. **Reducing Subthreshold Swing (SS)**:
- The SS value of traditional FETs is limited by the thermal emission limit at room temperature (approximately 60 mV/dec). The aim of this study is to lower this limit by introducing ferroelectric materials, achieving steeper switching behavior. This helps maintain sufficient on-current (Ion) while reducing the power supply voltage (Vdd), thereby reducing power consumption.

2. **Minimizing Hysteresis**:
- In Ferroelectric FETs (FeFETs), the hysteresis caused by ferroelectricity can severely affect performance in logic applications. By inserting a non-ferroelectric dielectric layer (such as HfOx) between the AlScN layer and the semiconductor layer, the paper successfully reduces hysteresis and achieves near-ideal SS values.

3. **Validating the Negative Capacitance Effect**:
- The paper experimentally demonstrates the negative capacitance effect in the MoS2/AlScN system and observes negative Drain-Induced Barrier Lowering (DIBL) and negative differential resistance (NDR) effects, further confirming the existence of the negative capacitance effect.

4. **Optimizing Device Structure for Stable Performance**:
- Researchers systematically study the impact of different thicknesses and types of dielectric layers (such as HfOx, AlOx, and hexagonal boron nitride (h-BN)) on device performance and find the optimal dielectric layer configuration, achieving SS values less than 60 mV/dec.

5. **Scaling to Large-Area Monolayer MoS2**:
- To achieve large-scale applications, researchers also fabricate NCFETs using large-area monolayer MoS2 grown by Chemical Vapor Deposition (CVD) and verify that they can still achieve sub-thermal emission limit SS values under short channel lengths.

In summary, this paper aims to provide a new solution for next-generation low-power logic devices by introducing aluminum scandium nitride ferroelectric materials and optimizing dielectric layer design to achieve NCFETs with low hysteresis and sub-thermal emission limit SS values.