Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission
Oluwatobi Olorunsola,Solomon Ojo,Grey Abernathy,Yiyin Zhou,Sylvester Amoah,P C Grant,Wei Dou,Joe Margetis,John Tolle,Andrian Kuchuk,Wei Du,Baohua Li,Yong-Hang Zhang,Shui-Qing Yu
DOI: https://doi.org/10.1088/1361-6528/ac38e4
IF: 3.5
2021-11-30
Nanotechnology
Abstract:Abstract In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology