In Situ Tuning of the Performance of Polymer Field-Effect Transistors by Soft Plasma Etching

Zhen Hu,Dongfan Li,Wanlong Lu,Zongze Qin,Yixin Ran,Xin Wang,Guanghao Lu

DOI: https://doi.org/10.1039/d3ma00190c

2023-01-01

Materials Advances

Abstract:The subthreshold swing, threshold voltage and hysteresis of PCDTPT OFETs can be in situ tuned by soft plasma etching.

What problem does this paper attempt to address?

In-Situ Tuning Threshold Voltage Of Field-Effect Transistors Based On Blends Of Poly(3-Hexylthiophene) With An Insulator Electret

guanghao lu,norbert koch,dieter neher

DOI: https://doi.org/10.1063/1.4928554

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Blending the conjugated polymer poly(3-hexylthiophene) (P3HT) with the insulating electret polystyrene (PS), we show that the threshold voltage V-t of organic field-effect transistors (OFETs) can be easily and reversely tuned by applying a gate bias stress at 130 degrees C. It is proposed that this phenomenon is caused by thermally activated charge injection from P3HT into PS matrix, and that this charge is immobilized within the PS matrix after cooling down to room temperature. Therefore, room-temperature hysteresis-free FETs with desired V-t can be easily achieved. The approach is applied to reversely tune the OFET mode of operation from accumulation to depletion, and to build inverters. (C) 2015 AIP Publishing LLC.
Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Yanxia Lin,Yu Cao,Haozhe Lu,Chenchen Liu,Zirui Zhang,Chuanhong Jin,Lian-Mao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1021/acsami.2c22049

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:An aligned semiconducting carbon nanotube (A-CNT) array has been considered an excellent channel material to construct high-performance field-effect transistors (FETs) and integrated circuits (ICs). The purification and assembly processes to prepare a semiconducting A-CNT array require conjugated polymers, introducing stubborn residual polymers and stress at the interface between A-CNTs and substrate, which inevitably affects the fabrication and performance of the FETs. In this work, we develop a process to refresh the Si/SiO2 substrate surface underneath the A-CNT film by wet etching to clean the residual polymers and release the stress. Top-gated A-CNT FETs fabricated with this process show significant performance improvement especially in terms of saturation on-current, peak transconductance, hysteresis, and subthreshold swing. These improvements are attributed to the increase in carrier mobility from 1025 to 1374 cm2/Vs by 34% after the substrate surface refreshing process. Representative 200 nm gate-length A-CNT FETs exhibit an on-current of 1.42 mA/μm and a peak transconductance of 1.06 mS/μm at a drain-to-source bias of 1 V, subthreshold swing (SS) of 105 mV/dec, and negligible hysteresis and drain-induced barrier lowering (DIBL) of 5 mV/V.
Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions

Jing Guo,Yu Liu,Ping‐An Chen,Xincan Qiu,Huan Wei,Jiangnan Xia,Huajie Chen,Zebing Zeng,Lei Liao,Yuanyuan Hu

DOI: https://doi.org/10.1002/aelm.202200148

IF: 6.2

2022-04-19

Advanced Electronic Materials

Abstract:A simple method to tune the performance of PEA2SnI4 FETs by transferring doped PDVT‐10 films to form organic semiconductor/perovskite van der Waals heterojunctions is proposed. The mobility and threshold voltage of the heterojunction FETs are tuned effectively using this method, and the device performance can be recovered once the doped PDVT‐10 is removed.The development of techniques for tuning/controlling the properties of electronic devices such as field‐effect transistors (FETs) is important for the optimization of device performance or the realization of custom‐designed device functions. Here, a simple method for tuning the performance of 2D perovskite ((PEA)2SnI4) FETs by transferring organic semiconductor PDVT‐10 films onto (PEA)2SnI4 films to form van der Waals heterojunctions (vdWHs) is presented. By varying the electrical properties of PDVT‐10 with doping technique, the performance of (PEA)2SnI4 FETs can be effectively tuned in terms of on‐state current, threshold voltage, and mobility, with mobility increased from 0.10 cm2 V−1 s−1 for pristine (PEA)2SnI4 FETs to 0.46 cm2 V−1 s−1 for the vdWH‐based FETs. This phenomenon can be attributed to the holes transfer occurring at heterojunction interface. More interestingly, the performance of the (PEA)2SnI4 FETs can be almost fully recovered once the PDVT‐10 films are removed, indicating the reversibility of the method. Such method of tuning semiconductor device performance by forming vdWHs can be also extended to other semiconductors and devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Dongfan Li,Yuanwei Zhu,Peng Wei,Wanlong Lu,Shengtao Li,Steven Wang,Ben Bin Xu,Guanghao Lu

DOI: https://doi.org/10.1109/led.2020.3026486

IF: 4.8157

2020-11-01

IEEE Electron Device Letters

Abstract:Chemical doping is widely used in the electronic devices. In p-type semiconductor thin films, oxygen doping fills the hole traps and increases hole concentrations, improving the performance of the organic field-effect transistors (OFETs). Due to the low ionization potential for p-type semiconductors, the superfluous holes induced by the oxygen doping degrades the OFETs off-state leakage performance. On the other hand, for p-type semiconductors with high ionization potential (up to 5.5-6.0 eV), the limited oxidation of oxygen is hard to achieve satisfactory doping concentrations to fill the trap states. This refers to the well-known intrinsic incompatibility between the oxygen doping and high-performance OFETs. Herein, a novel strategy is introduced to overcome the incompatibility and achieve high-performance OFETs by using the structural polymer electret. That is, moderate hole concentrations induced by low-pressure (30 Pa) oxygen plasma fill the hole traps within semiconductor. And the built-in field resulted from polymer electret accumulates the holes inside semiconductor near the semiconductor/electret interface, thus improving the OFETs performance. Using a model organic semiconductor with high ionization potential-2,7-didodecyl[1]benzothieno [3,2-b][1]benzothiophene (C12-BTBT) as an example, the high-performance OFETs with field-effect mobility ( $mu _{FET}$ ) of 3.5 cm2V−1 s−1, subthreshold-swing (SS) of 110 mV decade−1, on-off ratio of 104, and widely-tunable threshold voltage ( ${V} _{t}$ ) are realized at a low voltage below 2 V in the open air.

engineering, electrical & electronic
Surface Etching of Polymeric Semiconductor Films Improves Environmental Stability of Transistors

Chenyang Zhai,Xiaohui Yang,Songyu Han,Guanghao Lu,Peng Wei,Andrei Chumakov,Elisabeth Erbes,Qing Chen,Simone Techert,Stephan V. Roth,Peng Zhang,Laju Bu

DOI: https://doi.org/10.1021/acs.chemmater.1c00628

IF: 10.508

2021-03-29

Chemistry of Materials

Abstract:Solution-processed polymeric semiconductor films are attracting wide interest for applications in flexible electronics, wherein environmental stability is still a big obstacle. In many polymeric thin-film electronic devices, vertical phase separation has been observed, which leads to film depth dependences of electronic properties. Here, a soft plasma-assisted surface etching method to improve the environmental stability and maintain the electronic properties of organic field-effect transistors (OFETs) is proposed, by which the unwanted thin-film surface (exposed to air) is selectively taken away upon soft plasma etching, and the layer beneath the surface (subsurface) is preserved without any damage to the subsurface's structure or electronic function. Investigation of frequently used polymeric semiconductors poly(3-hexylthiophene) and poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4b′]dithiophen-2-yl)-alt [1,2,5]thiadiazolo[3,4-c]pyridine] shows that the crystallinity of the surface layer is higher than that of the subsurface layer. However, for p-type polymeric semiconductors, higher crystallinity usually leads to a lower ionization energy and higher doping concentration during exposure to air and thus a higher background conductivity, deteriorating the switching-off capability of the organic field-effect transistors (OFETs). Therefore, by removing this surface layer, the lifetime of OFETs in air is effectively increased by over 50%.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.1c00628?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.1c00628</a>.Transfer curves ((−ID)1/2–VG) for unetched and etched P3HT transistors; output curves of unetched and etched P3HT transistors; on/off ratio and field-effect mobility of unetched and etched P3HT transistors; transfer curves of PCDTPT transistors measured in different conditions; transfer curves ((−ID)1/2–VG) for unetched and etched PCDTPT transistors; VON, field-effect mobility and SS–1 of unetched and etched PCDTPT transistors; output curves of unetched and etched PCDTPT transistors; schematic diagram and transfer curve PCDTPT transistor (etched before the deposition of electrodes); dual sweep transfer and output curves of P3HT and PCDTPT transistors; the effect of thickness on PCDTPT transistors performance; the effect of encapsulation on PCDTPT transistors performance; and the effect of crystallinity on DPP-DTT transistors performance (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.1c00628/suppl_file/cm1c00628_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Shirui Guo,Maziar Ghazinejad,Xiangdong Qin,Huaxing Sun,Wei Wang,Francisco Zaera,Mihrimah Ozkan,Cengiz S. Ozkan

DOI: https://doi.org/10.1002/smll.201101611

IF: 13.3

2012-01-01

Small

Abstract:Graphene possesses many remarkable properties and shows promise as the future material for building nanoelectronic devices. For many applications such as graphene-based field-effect transistors (GFET), it is essential to control or modulate the electronic properties by means of doping. Using spatially controlled plasma-assisted CF(4) doping, the Dirac point shift of a GFET covered with a polycrystalline PS-P4VP block co-polymer (BCP) [poly(styrene-b-4-vinylpyridine)] having a cylindrical morphology can be controlled. By changing the chemical component of the microdomain (P4VP) and the major domain (PS) with the CF(4) plasma technique, the doping effect is demonstrated. This work provides a methodology where the Dirac point can be controlled via the different sensitivities of the PS and P4VP components of the BCP subjected to plasma processing.
Tuning Electrode Work Function and Surface Energy for Solution Shearing High-Performance Organic Field-Effect Transistors

Congcong Huang,Chengtai Li,Bowen Geng,Xiaohai Ding,Jing Zhang,Wei Tang,Shuming Duan,Xiaochen Ren,Wenping Hu

DOI: https://doi.org/10.1021/acsami.4c02012

IF: 9.5

2024-05-31

ACS Applied Materials & Interfaces

Abstract:A bottom-contact organic field-effect transistor (OFET) is easily adaptable to the standard lithography process because the contact electrodes are deposited before the organic semiconductor (OSC). However, the low surface energy of bare electrodes limits utilizing solution-processed single-crystal OSCs. Additionally, the bare electrode usually leads to a significant charge injection barrier, owing to its relatively low work function (WF). Here, we simultaneously improved the surface energy and...

materials science, multidisciplinary,nanoscience & nanotechnology
High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-Hexylthiophene)

Jiang Chun-Xia,Yang Xiao-Yan,Zhao Kai,Wu Xiao-Ming,Yang Li-Ying,Cheng Xiao-Man,Wei Jun,Yin Shou-Gen

DOI: https://doi.org/10.1088/0256-307x/28/11/118502

2011-01-01

Chinese Physics Letters

Abstract:The performance of polymer field-effect transistors is improved by thermal crosslinking of poly(3-hexylthiophene), using ditert butyl peroxide as the crosslinker. The device performance depends on the crosslinker concentration significantly. We obtain an optimal on/off ratio of 10(5) and the saturate field-effect mobility of 0.34 cm(2)V(-1)s(-1), by using a suitable ratios of ditert butyl peroxide, 0.5 wt% of poly(3-hexylthiophene). The microstructure images show that the crosslinked poly(3-hexylthiophene) active layers simultaneously possess appropriate crystallinity and smooth morphology. Moreover, crosslinking of poly(3-hexylthiophene) prevents the transistors from large threshold voltage shifts under ambient bias-stressing, showing an advantage in encouraging device environmental and operating stability.
Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics

Jinghai Li,Adara Babuji,Lamiaa Fijahi,Ann Maria James,Roland Resel,Tommaso Salzillo,Raphael Pfattner,Carmen Ocal,Esther Barrena,Marta Mas-Torrent

DOI: https://doi.org/10.1021/acsami.2c16760

IF: 9.5

2023-01-19

ACS Applied Materials & Interfaces

Abstract:Contact resistance and charge trapping are two key obstacles, often intertwined, that negatively impact on the performance of organic field-effect transistors (OFETs) by reducing the overall device mobility and provoking a nonideal behavior. Here, we expose organic semiconductor (OSC) thin films based on blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8) with polystyrene (PS) to (i) a CH(3)CN vapor annealing process, (ii) a doping I(2)/water procedure, and (iii) vapors of...

materials science, multidisciplinary,nanoscience & nanotechnology
Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Christopher R. Bond,Howard E. Katz,Daniel J. Frydrych,David B. G. Rose,Daniel Miranda

DOI: https://doi.org/10.1021/acsami.3c18777

IF: 9.5

2024-03-05

ACS Applied Materials & Interfaces

Abstract:Organic field-effect transistors (OFETs) were fabricated using three high-surface area and flexible expanded-poly(tetrafluoroethylene) (ePTFE) membranes in gate dielectrics, along with the semiconducting polymer poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-3,6-diyl)-alt-(2,2':5',2′′:5′′,2′′′-quaterthiophen-5,5′′′-diyl)] (PDPP4T). The transistor behavior of these devices was investigated following annealing at 50, 100, 150, and 200 °C, all sustained for 1 h. For annealing...

materials science, multidisciplinary,nanoscience & nanotechnology
Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Bo He,Gang He,Qingqing Hu,Wenhao Wang,Yujiao Li,Qian Gao,Yongchun Zhang

DOI: https://doi.org/10.1109/ted.2023.3287821

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, intermittent O2 plasma treatment (IOPT) is demonstrated to optimize the electrical performance of In2O3-based thin-film transistors (TFTs) based on electrospinning (ES)-driven nanofiber networks (NFNs). Reducing the single-pulse time (SPT) in IOPT results in the superior device performance. At an SPT of 1 s, the suppressed defects and the modified surface morphology have been detected, achieving the significant improvement in performance, including an ${I}_{\text {ON}}/{I}_{\text {OFF}}$ of $4.75\times 10^{{7}}$ and a high field-effect mobility ( $\mu _{\text {FE}}$ ) of 4.65 cm2V−1s−1. The results of the low-frequency noise analysis further prove that the mild process environment guarantees the quality of the device itself in the case of low SPT. Furthermore, the IOPT-optimized transistors perform well in logic devices and meet the needs of application electronics. The achieved advances provide a novel and valuable process scheme improvement based on IOPT, which would promote the development of electronic modification technology in the next-generation oxide-based electronics.

engineering, electrical & electronic,physics, applied
Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment

Junjie Wang,Yanan Ding,Zhen Wang,Qi Tang,Qian Chen,Guoxia Liu,Fukai Shan

DOI: https://doi.org/10.1109/led.2020.3047123

IF: 4.8157

2021-02-01

IEEE Electron Device Letters

Abstract:In this report, In2O3 nanofiber networks (NFNs) were prepared by electrospinning and the field-effect transistors (FETs) based on In2O3 NFNs were fabricated. The effects of plasma treatment on the electrical performance of the FETs based on In2O3 NFNs were investigated. It is found that the oxygen vacancy in In2O3 NFNs can be tuned by the plasma treatment and the electrical performance of the FETs can be tuned accordingly. In this work, X-ray photoelectron spectroscopy was employed to investigate the chemical stoichiometry in In2O3 nanofibers with respect to plasma treatment conditions. The electrical performances of the FETs based on In2O3 NFNs treated by various plasma treatment conditions were systematically studied. It is found that, compared to those without O2 plasma treatment, the FET based on In2O3 NFNs treated by O2 plasma at 120 W for 5 min exhibits high electrical performance, including the variation of threshold voltage from −22.34 to 7.81 V and current on/off ratio from $sim 10^{{3}}$ to $sim 10^{{7}}$ and a $mu _{text {FE}}$ of 1.51 cm2 /Vs. This result demonstrates that moderate plasma treatment can be adopted to improve the electrical performance of the FETs based on metal oxide NFNs.

engineering, electrical & electronic
Manipulating Transistor Operation Via Nonuniformly Distributed Charges in A Polymer Insulating Electret Layer

Laju Bu,Yuming Qiu,Peng Wei,Ling Zhou,Wanlong Lu,Shengtao Li,Guanghao Lu

DOI: https://doi.org/10.1103/physrevapplied.6.054022

IF: 4.6

2016-01-01

Physical Review Applied

Abstract:Organic field-effect transistors (FETs) with high- field-effect mobility (mu(FET)) and on: off ratio are attractive for flexible electronics. In this paper, we propose a design principle for manipulating transistor operations to in situ improve both the mu(FET) and on: off ratio of polymer transistors using nonuniformly distributed charges along an insulator electret layer between semiconductor and dielectric layers. Such nonuniform electrets obtained via applying gate-voltage stress with specific source-drain voltages provide a nonuniform electric field across the semiconductor layer and, thus, serve as a "nonuniform floating gate". As compared with transistors without electrets or with uniform electrets, nonuniform electrets lead to a different device operation; therefore, a much narrower gate-voltage range can be sufficient to switch the transistor between the on and off states representing a higher switching speed. The apparent mu(FET) of poly(3-hexylthiophene) semiconductor film is significantly improved by 1 order to higher than 1 cm(2) V-1 s(-1), with simultaneously improving the on: off ratio up to 10(8).
Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Yi-Lin Sun,Dan Xie,Jian-Long Xu,Cheng Zhang,Rui-Xuan Dai,Xian Li,Xiang-Jian Meng,Hong-Wei Zhu

DOI: https://doi.org/10.1038/srep23090

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect.
Polymer-Doped Ink System for Threshold Voltage Modulation in Printed Metal Oxide Thin Film Transistors.

Zhennan Zhu,Jianhua Zhang,Yiping Wang,Honglong Ning,Dong Guo,Wei Cai,Shangxiong Zhou,Zhihao Liang,Rihui Yao,Junbiao Peng

DOI: https://doi.org/10.1021/acs.jpclett.9b01206

IF: 6.888

2019-01-01

The Journal of Physical Chemistry Letters

Abstract:A polymer-doped ink system was applied to a printed InO x thin film transistor (TFT), and enhancement mode devices were obtained with an appropriate polymer doping amount. As the polymer doping concentration (PDC) increases, the threshold voltage of thin film transistor shifts positively, while the mobility and subthreshold slope show only an insignificant degradation. The microanalysis shows that the polymer doping can generate traps and defects in the oxide lattice, thus shifting the threshold voltage positively and degrading the mobility and subthreshold slope. Meanwhile, the doping can also facilitate the formation of an oxide lattice in the local region, which counterbalances the effect of doping on the mobility and subthreshold slope. The InO x, the TFT shows good electrical performance at an optimal PDC of 0.3 wt %, with a mobility of 4.2 cm2 V-1 s-1, a threshold voltage of 0.7 V, an on/off ratio of 106, and a subthreshold slope of 0.30 V/dec.
Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement Toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors.

Zongrui Wang,Huanli Dong,Ye Zou,Qiang Zhao,Jiahui Tan,Jie Liu,Xiuqiang Lu,Jinchong Xiao,Qichun Zhang,Wenping Hu

DOI: https://doi.org/10.1021/acsami.5b12307

IF: 9.5

2016-01-01

ACS Applied Materials & Interfaces

Abstract:Poor charge injection and transport at the electrode/semiconductor contacts has been so far a severe performance hurdle for bottom-contact bottom-gate (BCBG) organic field-effect transistors (OFETs). Here, we have developed a simple, economic, and effective method to improve the carrier injection efficiency and obtained high-performance devices with low cost and widely used source/drain (S/D) electrodes (Ag/Cu). Through the simple electrode etching process, the work function of the electrodes is more aligned with the semiconductors, which reduces the energy barrier and facilitates the charge injection. Besides, the formation of the thinned electrode edge with desirable micro/nanostructures not only leads to the enlarged contact side area beneficial for the carrier injection but also is in favor of the molecular self-organization for continuous crystal growth at the contact/active channel interface, which is better for the charge injection and transport. These effects give rise to the great reduction of contact resistance and the amazing improvement of the low-cost bottom-contact configuration OFETs performance.
Two Methods of Tuning Threshold Voltage of Bulk Finfets with Replacement High-K Metal-Gate Stacks

Miao Xu,Huilong Zhu,Yanbo Zhang,Qiuxia Xu,Yongkui Zhang,Changliang Qin,Qingzhu Zhang,Huaxiang Yin,Hao Xu,Shuai Chen,Jun Luo,Chunlong Li,Chao Zhao,Tianchun Ye

DOI: https://doi.org/10.1016/j.sse.2016.12.016

IF: 1.916

2017-01-01

Solid-State Electronics

Abstract:In this work, we propose two threshold voltage (V-TH) tuning methods for bulk FinFETs with replacement high-k metal gate. The first method is to perform a vertical implantation into fin structure after dummy gate removal, self-aligned forming halo & punch through stop pocket (halo & PTSP) doping profile. The second method is to execute P+/BF2+ ion implantations into the single common work function (WF) layer in N-/P-FinFETs, respectively. These two methods have been investigated by TCAD simulations and MOS-capacitor experiments respectively, and then integrated into FinFET fabrication successfully. Experimental results show that the halo & PTSP doping profile can reduce V-TH roll off and total variation. With P+/BF2+ doped WF layer, the VTH-sat shift -0.43 V/+1.26 V for N-FinFETs and -0.75 V/+0.11 V for P-FinFETs, respectively, with gate length of 500 nm. The proposed two methods are simple and effective for FinFET VTH tuning, and have potential for future application of massive production. (C) 2016 Elsevier Ltd. All rights reserved.
Tuning Organic Electrochemical Transistor Threshold Voltage using Chemically Doped Polymer Gates

Siew Ting Melissa Tan,Gijun Lee,Ilaria Denti,Garrett LeCroy,Kalee Rozylowicz,Adam Marks,Sophie Griggs,Iain McCulloch,Alexander Giovannitti,Alberto Salleo

DOI: https://doi.org/10.1002/adma.202202359

IF: 29.4

2022-06-24

Advanced Materials

Abstract:Organic electrochemical transistors (OECTs) have shown promise as transducers and amplifiers of minute electronic potentials due to their large transconductances. Tuning OECT threshold voltage is important to achieve low‐powered devices with amplification properties within the desired operational voltage range. However, traditional design approaches have struggled to decouple channel and materials properties from threshold voltage, thereby compromising on several other OECT performance metrics such as electrochemical stability, transconductance, and dynamic range. In this work, we utilize simple solution processing methods to chemically dope polymer gate electrodes, thereby controlling their work function, which in turn tunes the operation voltage range of OECTs without perturbing their channel properties. Chemical doping of initially air‐sensitive polymer electrodes further improves their electrochemical stability in ambient conditions. Thus, we demonstrate, for the first time, OECTs which are simultaneously low‐powered and electrochemically resistant to oxidative side reactions at ambient conditions. This approach shows that threshold voltage, which was once interwoven with other OECT properties, can in fact be an independent design parameter, expanding the design space of OECTs. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors

Peixuan Hu,Zhixiang Gao,Lu Yang,Wanfa Li,Xiaohan Liu,Ting Li,Yujia Qian,Lingyan Liang,Yufang Hu,Hongtao Cao

DOI: https://doi.org/10.3390/electronics13081478

IF: 2.9

2024-04-13

Electronics

Abstract:In this article, this research demonstrates the influence of in-situ introduction of H2 into the working gas on the physical properties of post-annealed In2O3 thin films and the performance of associated devices. A gradual increase in the H2 ratio leads to improved film quality, as indicated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscope analyses showing a reduction in defect states such as band-tail states and VO in the film, and a smoother surface morphology with the root mean square roughness approximately 0.446 nm. Furthermore, this hydrogen doping effect results in a distinct shift in the device's threshold voltage toward the positive direction, and an improvement in the field-effect mobility and subthreshold swing. Consequently, a high-performance In2O3:H TFT is developed, exhibiting a field-effect mobility of 47.8 cm2/Vs, threshold voltage of −4.1 V and subthreshold swing of 0.25 V/dec. These findings highlight the potential of in-situ H doping as a promising approach to regulate In2O3-based TFTs.

engineering, electrical & electronic,computer science, information systems,physics, applied
Organic-semiconductor: Polymer-electret Blends for High-Performance Transistors

Peng Wei,Shengtao Li,Dongfan Li,Han Yu,Xudong Wang,Congcong Xu,Yaodong Yang,Laju Bu,Guanghao Lu

DOI: https://doi.org/10.1007/s12274-018-2088-7

IF: 9.9

2018-01-01

Nano Research

Abstract:As compared with polymer semiconductors, solution-processed small-molecule semiconductors usually have poorer film-formation properties, which induces wide variations in device performance in terms of mobility and threshold voltage, thus severely limiting their commercial applications. In this work, we propose an easily accessible method to improve the performance and reduce the variability of small-molecule organic field-effect transistors (OFETs) by blending organic semiconductors with an insulator polymer, which is subsequently post-treated by gate stress to generate an electret. By blending the organic semiconductor 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) with the insulator polystyrene, uniform transport layers with vertically phase segregated morphology are obtained, from which the mobility and threshold voltage of OFETs are largely manipulated. The OFETs exhibit field-effect mobilities as high as 7.5 cm2·V−1·s−1 with an on/off ratio exceeding 106 in ambient conditions. This double-layer structure provides an appropriate architecture for applying gate-stress to inject charges into the insulating layer, forming an electret. The generation of the electret is thermally accelerated and thus can be easily realized under moderate gate-stress at elevated temperature (e.g., 60 °C). After cooling, the electret layer serves as a floating-gate, which not only continuously tunes the threshold voltage and field-effect mobility, but also helps minimize the contact resistances and optimize the subthreshold swing. As an application of this method, a digital inverter is built and its performance is optimized via in situ tuning of its individual transistors.

In Situ Tuning of the Performance of Polymer Field-Effect Transistors by Soft Plasma Etching

In-Situ Tuning Threshold Voltage Of Field-Effect Transistors Based On Blends Of Poly(3-Hexylthiophene) With An Insulator Electret

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Surface Etching of Polymeric Semiconductor Films Improves Environmental Stability of Transistors

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Tuning Electrode Work Function and Surface Energy for Solution Shearing High-Performance Organic Field-Effect Transistors

High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-Hexylthiophene)

Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment

Manipulating Transistor Operation Via Nonuniformly Distributed Charges in A Polymer Insulating Electret Layer

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Polymer-Doped Ink System for Threshold Voltage Modulation in Printed Metal Oxide Thin Film Transistors.

Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement Toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors.

Two Methods of Tuning Threshold Voltage of Bulk Finfets with Replacement High-K Metal-Gate Stacks

Tuning Organic Electrochemical Transistor Threshold Voltage using Chemically Doped Polymer Gates

Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors

Organic-semiconductor: Polymer-electret Blends for High-Performance Transistors