Manipulating Transistor Operation Via Nonuniformly Distributed Charges in A Polymer Insulating Electret Layer

Laju Bu,Yuming Qiu,Peng Wei,Ling Zhou,Wanlong Lu,Shengtao Li,Guanghao Lu
DOI: https://doi.org/10.1103/physrevapplied.6.054022
IF: 4.6
2016-01-01
Physical Review Applied
Abstract:Organic field-effect transistors (FETs) with high- field-effect mobility (mu(FET)) and on: off ratio are attractive for flexible electronics. In this paper, we propose a design principle for manipulating transistor operations to in situ improve both the mu(FET) and on: off ratio of polymer transistors using nonuniformly distributed charges along an insulator electret layer between semiconductor and dielectric layers. Such nonuniform electrets obtained via applying gate-voltage stress with specific source-drain voltages provide a nonuniform electric field across the semiconductor layer and, thus, serve as a "nonuniform floating gate". As compared with transistors without electrets or with uniform electrets, nonuniform electrets lead to a different device operation; therefore, a much narrower gate-voltage range can be sufficient to switch the transistor between the on and off states representing a higher switching speed. The apparent mu(FET) of poly(3-hexylthiophene) semiconductor film is significantly improved by 1 order to higher than 1 cm(2) V-1 s(-1), with simultaneously improving the on: off ratio up to 10(8).
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