Abstract: Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped charges are particularly relevant in field effect transistors (FETs) and can lead to a large hysteresis, which endangers stable circuit operation. Based on the notion that charge trapping is highly sensitive to the energetic alignment of the channel Fermi-level with the defect band in the insulator, we propose to optimize device stability by deliberately tuning the channel Fermi-level. Our approach aims to minimize the amount of electrically active border traps without modifying the total number of traps in the insulator. We demonstrate the applicability of this idea by using two differently doped graphene layers in otherwise identical FETs with Al$_2$O$_3$ as a gate oxide mounted on a flexible substrate. Our results clearly show that by increasing the distance of the Fermi-level to the defect band, the hysteresis is significantly reduced. Furthermore, since long-term reliability is also very sensitive to trapped charges, a corresponding improvement in reliability is both expected theoretically and demonstrated experimentally. Our study paves the way for the construction of more stable and reliable 2D FETs in which the channel material is carefully chosen and tuned to maximize the energetic distance between charge carriers in the channel and the defect bands in the insulator employed.

Two Methods of Tuning Threshold Voltage of Bulk Finfets with Replacement High-K Metal-Gate Stacks

Threshold Voltage Modulation Engineering Using P‐type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Suppression of Threshold Voltage Variation by TiN Surface Treatment for N-FinFETs with Very Thin Work Function Metal Layers

Threshold Voltage Adjustment of Pmos-Radiation Field-Effect Transistor with Thick Thermal Oxide

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

Compact Modeling of Dynamic Threshold Voltage of Nanoscale FinFET High K Gate Stack and Application in Circuit Simulation

Tuning the Threshold Voltage of Double-Gate Low-Voltage Transparent Oxide-Based Tfts by A Lateral In-Plane Gate

Temperature-Dependent Threshold Voltage Extraction of FinFETs Using Noise Measurements

Improving Low-Frequency Noise in 14-Nm FinFET by Optimized High-k/Metal Gate Thermal Processing

Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

Modeling of dynamic threshold voltage in high K gate stack and the application in FinFET reliability

Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

New Insights Into The Near-Threshold Design In Nanoscale Finfet Technology For Sub-0.2v Applications

Analytical Models for Threshold Voltage, Drain Induced Barrier Lowering Effect of Junctionless Triple-Gate Finfets

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Simulation

Controlling Threshold Voltage of CMOS SOI Nanowire FETs with Sub-1 Nm Dipole Layers Formed by Atomic Layer Deposition

Evaluation of Dynamic-Adjusting Threshold-Voltage Scheme for Low-Power FinFET Circuits.

Design and Performance Optimization of Dopingless Vertical Nanowire TFET Using Gate Stacking Technique