Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions

Jing Guo,Yu Liu,Ping‐An Chen,Xincan Qiu,Huan Wei,Jiangnan Xia,Huajie Chen,Zebing Zeng,Lei Liao,Yuanyuan Hu

DOI: https://doi.org/10.1002/aelm.202200148

IF: 6.2

2022-04-19

Advanced Electronic Materials

Abstract:A simple method to tune the performance of PEA2SnI4 FETs by transferring doped PDVT‐10 films to form organic semiconductor/perovskite van der Waals heterojunctions is proposed. The mobility and threshold voltage of the heterojunction FETs are tuned effectively using this method, and the device performance can be recovered once the doped PDVT‐10 is removed.The development of techniques for tuning/controlling the properties of electronic devices such as field‐effect transistors (FETs) is important for the optimization of device performance or the realization of custom‐designed device functions. Here, a simple method for tuning the performance of 2D perovskite ((PEA)2SnI4) FETs by transferring organic semiconductor PDVT‐10 films onto (PEA)2SnI4 films to form van der Waals heterojunctions (vdWHs) is presented. By varying the electrical properties of PDVT‐10 with doping technique, the performance of (PEA)2SnI4 FETs can be effectively tuned in terms of on‐state current, threshold voltage, and mobility, with mobility increased from 0.10 cm2 V−1 s−1 for pristine (PEA)2SnI4 FETs to 0.46 cm2 V−1 s−1 for the vdWH‐based FETs. This phenomenon can be attributed to the holes transfer occurring at heterojunction interface. More interestingly, the performance of the (PEA)2SnI4 FETs can be almost fully recovered once the PDVT‐10 films are removed, indicating the reversibility of the method. Such method of tuning semiconductor device performance by forming vdWHs can be also extended to other semiconductors and devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology