Effect of the Annealing Atmosphere on Crystal Phase and Thermoelectric Properties of Copper Sulfide
Mengyao Li,Yu Liu,Yu Zhang,Xu Han,Ting Zhang,Yong Zuo,Chenyang Xie,Ke Xiao,Jordi Arbiol,Jordi Llorca,Junfeng Liu,Andreu Cabot,Maria Ibáñez
DOI: https://doi.org/10.1021/acsnano.0c09866
IF: 17.1
2021-03-01
ACS Nano
Abstract:Cu<sub>2–<i>x</i></sub>S has become one of the most promising thermoelectric materials for application in the middle-high temperature range. Its advantages include the abundance, low cost, and safety of its elements and a high performance at relatively elevated temperatures. However, stability issues limit its operation current and temperature, thus calling for the optimization of the material performance in the middle temperature range. Here, we present a synthetic protocol for large scale production of covellite CuS nanoparticles at ambient temperature and atmosphere, and using water as a solvent. The crystal phase and stoichiometry of the particles are afterward tuned through an annealing process at a moderate temperature under inert or reducing atmosphere. While annealing under argon results in Cu<sub>1.8</sub>S nanopowder with a rhombohedral crystal phase, annealing in an atmosphere containing hydrogen leads to tetragonal Cu<sub>1.96</sub>S. High temperature X-ray diffraction analysis shows the material annealed in argon to transform to the cubic phase at <i>ca</i>. 400 K, while the material annealed in the presence of hydrogen undergoes two phase transitions, first to hexagonal and then to the cubic structure. The annealing atmosphere, temperature, and time allow adjustment of the density of copper vacancies and thus tuning of the charge carrier concentration and material transport properties. In this direction, the material annealed under Ar is characterized by higher electrical conductivities but lower Seebeck coefficients than the material annealed in the presence of hydrogen. By optimizing the charge carrier concentration through the annealing time, Cu<sub>2–<i>x</i></sub>S with record figures of merit in the middle temperature range, up to 1.41 at 710 K, is obtained. We finally demonstrate that this strategy, based on a low-cost and scalable solution synthesis process, is also suitable for the production of high performance Cu<sub>2–<i>x</i></sub>S layers using high throughput and cost-effective printing technologies.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09866?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09866</a>.Additional characterization data including TEM, HRTEM, SEM, XRD, DSC, ICP, thermoelectric properties, and literature comparison (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09866/suppl_file/nn0c09866_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology