Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Determination of CN Deep Donor Level in P-Gan with Heavy Mg Doping Via a Carrier Statistics Approach

The Movement of the Fermi Level in Heavily C Doped GaN

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Reducing Mg Acceptor Activation-Energy in Al 0.83 Ga 0.17 N Disorder Alloy Substituted by Nanoscale (AlN) 5 /(GaN) 1 Superlattice Using Mg Ga δ-Doping: Mg Local-Structure Effect

Non-Equilibrium Acceptor Concentration in Gan : Mg Grown by Metalorganic Chemical Vapor Deposition

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Determination of Mg acceptor concentration in GaN through photoluminescence

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Study of the heavily p-type doping of cubic GaN with Mg