Abstract:Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device technologies with specially engineered properties are under intense investigation to revolutionize information processing with brain-inspired computing primitives for ultra energy-efficient implementation of AI and machine learning tasks. Ferroelectric memories with ultra-low power and fast operation, non-volatile data retention and reliable switching to multiple polarization states promises one such option for non-volatile memory and synaptic weight elements in neuromorphic hardware. For quick adaptation of industry, new materials need complementary metal oxide semiconductor (CMOS) process compatibility which brings a whole new set of challenges and opportunities for advanced materials design. In this work, we report on designing of back-end-of-line compatible ferroelectric Hf0.5Zr0.5O2 capacitors that are capable of recovery from fatigue multiple times reaching 2Pr > 40 microC cm-2 upon each retrieval. Our results indicate that with specifically engineered material stack and annealing protocols, it is possible to reach endurance exceeding 10^9 cycles at room temperature that can lead to ultralow power ferroelectric non-volatile memory components or synaptic weight elements compatible with online training or inference tasks for neuromorphic computing.

HfO₂-Based Ferroelectric Optoelectronic Memcapacitors

Photoelectric In-memory Logic and Computing Achieved in HfO2-based Ferroelectric Optoelectronic Memcapacitors

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Capacitive Coupling Behaviors Based on Triple Cation Organic-Inorganic Hybrid Perovskite Memristor

Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor

HfO<sub>2</sub>-based Ferroelectric Devices for Low Power Applications

A Silicon-Based Ferroelectric Capacitor for Memory Devices

Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

3D HfO<sub>2</sub> Thin Film MEMS Capacitor with Superior Energy Storage Properties

A HfO 2 Ferroelectric Capacitor Based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications

Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

HfO<inf>2</inf>-based Ferroelectric Devices for Low Power Applications

Ferroelectric Polarization Assisted Trapping Memcapacitor

A ferroelectric fin diode for robust non-volatile memory

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Ultralow-power in-memory computing based on ferroelectric memcapacitor network

Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware