Abstract:This study investigates the compositional analysis and growth of β-(In x Ga 1- x ) 2 O 3 thin films on (010) β-Ga 2 O 3 substrates using mist chemical vapor deposition (CVD), including the effects of the growth temperature. We investigated the correlation between In composition and b -axis length in coherently grown films, vital for developing high-electron-mobility transistors and other devices based on β-(In x Ga 1- x ) 2 O 3 . Analytical techniques, including X-ray diffraction (XRD), reciprocal space mapping, and atomic force microscopy, were employed to evaluate crystal structure, strain relaxation, and surface morphology. The study identified a linear relationship between In composition and b -axis length in coherently grown films, facilitating accurate composition determination from XRD peak positions. The films demonstrated high surface flatness with root-mean-square roughness below 0.6 nm, though minor relaxation and granular features emerged at higher In compositions ( x = 0.083) at the growth temperature of 750°C. XRD results revealed that lattice relaxation were observed at a growth temperature of 700°C despite low In composition. In contrast, at 800°C, the In composition was higher than at 750°C, and coherent growth was achieved. The surface morphology was the flattest at 750°C. These findings indicate that the growth temperature plays a crucial role in the mist CVD growth of β-(In x Ga 1- x ) 2 O 3 thin films. This study offers insights into the relationship between In composition and lattice parameters in coherently grown β-(In x Ga 1- x ) 2 O 3 films, as well as the effect of growth conditions, contributing to the advancement of ultra-wide bandgap semiconductor device development. This paper presents innovative growth techniques for β-(InxGa1-x)2O3 thin films, enabling precise In composition control and enhancing potential applications in next-generation power-switching devices.

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Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$

Effect of oxygen flow ratio on crystallization and structural characteristics of gallium oxide thin films

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Exploration of Β-(Al X Ga 1− X ) 2 O 3 Thin Films at Different Deposition Thicknesses by Magnetron Sputtering

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

Effects of Growth Temperature on Phase Transformation and Crystal Quality of Ga2O3 Films Grown on Si/AlN Composite Substrates by MOCVD

Composition analysis of β-(InxGa1-x)2O3 thin films coherently grown on (010) β-Ga2O3 via mist CVD

Study of InGaN Films Grown by MOCVD

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD