Abstract:Aluminum nitride thin film can be applied as a high-temperature material because of its excellent heat resistance and thermal conductivity, and high mechanical strength. In addition, application and application to surface acoustic wave devices using piezoelectric properties are expected, and it is known as a material that can replace ZnO. To obtain excellent crystal orientation, the residual stress behavior inside the thin film should be fully evaluated and identified. In this study, AlN thin films were deposited by the conventional PM sputtering method and the Two-Facing-Target (TFT) PM sputtering method using BLC glass and quartz glass with different thermal expansion coefficients as substrates. In the process of cooling the fabricated thin film, the effect of the difference in the coefficient of thermal expansion with the substrate on the residual stress of the thin film and the effect of the substrate temperature on the properties of the thin-film structure and the residual stress when the thin film was deposited were investigated. The AlN thin film deposited on the glass substrate by the conventional PM sputtering method showed a crystal structure in which the c -axis was preferentially oriented in the normal direction of the substrate surface, the same as the AlN thin film produced by the two-facing-target PM sputtering method. The AlN thin film deposited on the glass substrate had a crystal structure in which the c -axis was preferentially oriented in the normal direction to the substrate, and the c -axis orientation showed excellent c -axis orientation when the substrate temperature was higher than 523 K. In the case of the quartz glass substrate, the increase of the tensile residual stress was evident as the substrate temperature increased, and the effect of the thermal residual stress was confirmed.

Effect of Substrate Type on the Lattice Structure of AlN Thin Films Annealed at High Temperature

High temperature lattice structure evolution of C-axis preferred orientation AlN thin films and its application in temperature measurement

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering

Studies on the Effects of the Different Substrates on the Structures of AlN Thin Films

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

High Temperature Characteristics of Aln Film Saw Sensor Integrated with Tc4 Alloy Substrate

Substrate temperature induced physical property variation of InxAl1-xN alloys prepared on Al2O3 by magnetron sputtering

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

Effects of Substrate Temperature and Post-Annealing on Microstructure and Properties of (alcrnbsitiv)n Coatings

Study on Preferential Orientation of RF Magnetron Sputtered AIN Films at Low Substrate Temperature

Growth of AlN Films As a Function of Temperature on Mo Films Deposited by Different Techniques

Effect of substrate temperature and bias voltage on the properties in DC magnetron sputtered AlN films on glass substrates

Study on c-axis orientation of AlN thin film on the influence Al buffer layer and Ar/N2 gas flow ratio in reactive magnetron sputtering

Investigation of thermal annealing on the characteristics of Sc Al1−N thin films