Abstract:It is challenging to grow aluminum nitride (AlN) in c-axis orientation on a metal electrode, primarily due to lattice mismatch and the difference between the coefficients of thermal expansion. In this work, we investigate and optimize the effects of several process parameters such as plasma power, N2 flow concentration, quality of the bottom electrode, and oxygen content. The optimized deposition parameters are necessary for the growth of highly c-axis textured AlN thin film having a thickness of 300 nm on a Mo/SiO2/Si substrate. To this end, c-axis oriented AlN thin films were sputtered on a molybdenum (Mo) electrode at the low substrate temperature (300°C). The quality of the Mo electrode was optimized in terms of the surface roughness, interfacial energy, and full width at half maximum (FWHM) of x-ray diffraction (XRD) peak for facilitating the c-axis growth of the AIN film. Results indicate that the growth of AlN film in (002) orientation on the Mo electrode strongly depends on plasma power, the optimum value of which is found to be 300 W. Also, an extremely low FWHM of AlN (002) peak 0.62° is achieved at ∼ 38% N2 concentration. The oxygen content is also found to be an influential parameter, with a threshold value of 28% by atomic weight, beyond which amorphous growth of the AIN film is observed. The fabricated Mo-AlN-Mo structure has a dielectric constant of 8.89 and a capacitance value of 42 pF measured across the top electrode area of 400 × 400 μm2. The grown c-axis oriented AlN film can be used in applications such as the piezoelectric energy harvester (PEH) and the thin-film bulk acoustic resonator (FBAR).

Growth of AlN Films As a Function of Temperature on Mo Films Deposited by Different Techniques

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Influence Of Metal Electrodes On C-Axis Orientation Of Aln Thin Films Deposited By Dc Magnetron Sputtering

Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

Low Temperature Growth of Reactive Partially Ionized Beam Deposited AlN Films

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Effect of substrate temperature and bias voltage on the properties in DC magnetron sputtered AlN films on glass substrates

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Microstructure and tribological performance of (AlCrWTiMo)N film controlled by substrate temperature

Growth-microstructure-thermal property relations in AlN thin films

Substrate Temperature Effect on Growth Behavior and Microstructure-Properties Relationship in Amorphous Ni-Nb Thin Films

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy

Substrate temperature induced physical property variation of InxAl1-xN alloys prepared on Al2O3 by magnetron sputtering

High temperature lattice structure evolution of C-axis preferred orientation AlN thin films and its application in temperature measurement

XPS studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations