Effect of Sintering Process on the Mechanical Properties of Silicon Nitride

Youyuan Yue,Chenjiang Yu,Min Wang,Guangyin Lei
DOI: https://doi.org/10.1109/icept56209.2022.9873272
2022-01-01
Abstract:With the rapid development of silicon carbide (SiC) power semiconductors, the significant improvements in power density and higher current level result in much higher heat flux density than that of conventional Si power modules. Thermal management has therefore become one of the biggest challenges to further improving the power density. As the substrate of choice, ceramic substrate with copper or aluminum metallization, i.e. direct-bond copper (DBC), direct-bond aluminum (DBA), and active metal brazing (AMB), have gained popularity due to their ease of use, high thermal conductivity, high voltage insulation capability and high mechanical stability. Among different ceramic materials, silicon nitride (Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> ) has drawn extensive attention due to its superior mechanical properties and thermal conductivity, rendering it a promising substrate material for high-power density, high-reliability power device packaging. In this review, we presented and compared the properties of Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> , AlN, and Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> substrates, with special emphasis on the effect of different sintering condition parameters on the structures and properties of Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> substrates. The latest progress of Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> ceramic substrates is reviewed and critical trends are proposed.
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