Study on the thermal conductivity of Si3N4 sintered with Y2O3-MgO additive system

yuan bo lin,xiao shan ning,he ping zhou,Wei Xü

2002-01-01

Key Engineering Materials

Abstract:Si3N4 possesses excellent mechanical and electrical properties, which is an ideal substitute for AlN in the fabrication of electronic substrates. In order to deal with the heat from electronic devices and the thermal shocks in the service of substrate, high thermal conductivity is required. Recent study shows that the sintering additive systems greatly influence the sinterability and thermal conductivity of Si3N4. In this work, Y2O3-MgO additive system was adopted and the thermal conductivity of Si3N4 with Y2O3-MgO as sintering additives was investigated. Several kinds of Si3N4 with 5wt%Y2O3 and 1-4wt% MgO were gas-pressure-sintered at different temperatures. Results show that the thermal conductivity of the Si3N4 is over 40 Wm-1K-1 and that the sintering condition and the amount of MgO affect the thermal conductivity of Si3N4. Combining XRD and SEM observation, the microstructure of Si3N4 was studied to elucidate the relationship between the processing parameters and the thermal conductivity.