Abstract:3D packaging has broad applications due to its high integration, lightweight, small package size and low cost. Through silicon vias (TSV) have attracted much attention as the only packaging technology to achieve vertical interconnection. The quality of superior filling by electroplated copper (Cu) determines the reliability of TSV in electronic devices. As one of the most vital additives, levelers are always the confidential part of electrolyte formulations. In general, a nitrogen-containing heterocyclic compound can be employed as a potential leveler for TSV filling, like Janus Green B (JGB). However, the mechanism of the leveler during copper electrodeposition is shrouded in mystery. Whether the nitrogen-nitrogen double bond (-N=N-) or the nitrogen cation (N+) in the JGB molecule take the effect in electroplating is still a hot topic of debate. Here, three levelers with or without -N=N-, containing JGB, phenosafranin (PS) and phenazine methosulfate (PMS), are utilized in the TSV electroplated process to explore the active site of molecules. The filling performance of different levelers were compared. Electrochemical measurements was used to investigate the leveling mechanism. The optical microscope (OM) and ultraviolet spectrophotometer (UV-vis) were used to characterize the filling quality and the change of electrolyte before and after electrodeposition. The results of characterizations confirmed that both -N=N- and N+ play a certain effect in electroplating, the reductive reaction of -N=N- competes with Cu reduction and the electrostatic adsorption of N+ and Cl- enables the deposition inhibition of Cu at salient sites.

The Synergistic Effects of Additives on the Micro Vias Copper Filling

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Wetting Process of Copper Filling in Through Silicon Vias

Synergistic Effect of Different Additives on Microvia Filling in an Acidic Copper Plating Solution

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Evaluating Copper Plating Process for Filling Micro Vias with Thin Surface Cu by the 1-(4-carboxyphenyl)-5-mercapto-1h-tetrazole Additive

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers

Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Synergistic Effect of Additives on Filling of Tapered TGV Vias by Copper Electroplating

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Effects Of Additives On Filling Blind Vias For Hdi Manufacture

Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling

Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Collaborative Effect Between Additives and Current in TSV Via Filling Process

Effect of additives on copper electroplating profile for TSV filling