Abstract:Purpose The adsorption and acceleration behavior of 3-mercaptopropyl sulfonate (MPS) were investigated by electrochemical tests for microvia filling by copper electroplating. Design/methodology/approach The synergistic effects of one suppressor of propylene oxide ethylene oxide propylene oxide named PEP and MPS as the accelerator during copper electroplating were also investigated by electrochemical methods such as electrochemical impedance spectroscopy cyclic voltammetric stripping (CVS) and Galvanostatic measurements (GMs). Findings The research results suggest that the adsorption of MPS onto the Cu-RDE metal surface was a spontaneous process and the adsorbing of MPS on cathode was proposed to physical-chemistry adsorption in the plating formula. There was no potential difference (i.e. ?? = 0) of GMs until MPS was injected into the plating solution suggest that copper deposition is not diffusion-controlled in the presence of PEP–Cl–JGB. Originality/value A new composition of plating bath was found to be effective to perform bottom-up copper filling of microvias in the fabrication of PCB in electronic industries. The adsorption of MPS into the Cu-RDE metal surface was a spontaneous process and the adsorbing of MPS on cathode was studied by EIS and the results proposed to physical-chemistry adsorption in the plating formula. An optimal plating solution composed of CuSO4, H2SO4, chloride ions, PEP, MPS and JGB was obtained, and the microvia could be fully filled using the plating formula.

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Evaluating Copper Plating Process for Filling Micro Vias with Thin Surface Cu by the 1-(4-carboxyphenyl)-5-mercapto-1h-tetrazole Additive

The Synergistic Effects of Additives on the Micro Vias Copper Filling

Synergistic Effect of Different Additives on Microvia Filling in an Acidic Copper Plating Solution

Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers

1-(4-Hydroxyphenyl)-2H-tetrazole-5-thione as a leveler for acid copper electroplating of microvia

Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling

Through silicon via filling by copper electroplating in acidic cupric methanesulfonate bath

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Synergistic Effect of Additives on Filling of Tapered TGV Vias by Copper Electroplating

Tetraoxa-Diphosphaspiro Derivative As Suppressor For Microvia Filling By Copper Electroplating In Acidic Solution

Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Using a Triblock Copolymer As a Single Additive in High Aspect Ratio Through Silicon Via (TSV) Copper Filling