Abstract:3D packaging has broad applications due to its high integration, lightweight, small package size and low cost. Through silicon vias (TSV) have attracted much attention as the only packaging technology to achieve vertical interconnection. The quality of superior filling by electroplated copper (Cu) determines the reliability of TSV in electronic devices. As one of the most vital additives, levelers are always the confidential part of electrolyte formulations. In general, a nitrogen-containing heterocyclic compound can be employed as a potential leveler for TSV filling, like Janus Green B (JGB). However, the mechanism of the leveler during copper electrodeposition is shrouded in mystery. Whether the nitrogen-nitrogen double bond (-N=N-) or the nitrogen cation (N+) in the JGB molecule take the effect in electroplating is still a hot topic of debate. Here, three levelers with or without -N=N-, containing JGB, phenosafranin (PS) and phenazine methosulfate (PMS), are utilized in the TSV electroplated process to explore the active site of molecules. The filling performance of different levelers were compared. Electrochemical measurements was used to investigate the leveling mechanism. The optical microscope (OM) and ultraviolet spectrophotometer (UV-vis) were used to characterize the filling quality and the change of electrolyte before and after electrodeposition. The results of characterizations confirmed that both -N=N- and N+ play a certain effect in electroplating, the reductive reaction of -N=N- competes with Cu reduction and the electrostatic adsorption of N+ and Cl- enables the deposition inhibition of Cu at salient sites.

Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling

Influence of Electroplating Current Density on Through Silicon Via Filling

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Wetting Process of Copper Filling in Through Silicon Vias

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Evaluating the Via Filling Performance with Thin Surface Cu by the Synergistic Effect of Different Additives

Linear Sweep Voltammetric Study on the Copper Electrodeposition of Though-Silicon-Vias

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Quick Development Of Copper Electroplating Formula For Via And Trench Filling By An Experiential Method

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Filling Technique Of Through Silicon Via By Co-Depositing Copper And Sic Nano-Particles

Through silicon via filling by copper electroplating in acidic cupric methanesulfonate bath

Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

The Synergistic Effects of Additives on the Micro Vias Copper Filling