Abstract:SID Symposium Digest of Technical PapersVolume 52, Issue S1 p. 452-452 Poster Session: P-1: AMDFree to Read P-1.15: Short time negative gate voltage pulse to eliminate persistent photoconductivity in Amorphous InZnO thin film transistors Changhui Fan, Changhui Fan School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorYu Xin, Yu Xin School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorLudong Qin, Ludong Qin School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorXiaoliang Zhou, Xiaoliang Zhou School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorShengdong Zhang, Shengdong Zhang School of Electronic and Computer Engineering, Peking University, Shenzhen, China Institute of Microelectronics, Peking University, Beijing, China Active Matrix Display Beijing Engineering Research Center, Beijing, ChinaSearch for more papers by this author Changhui Fan, Changhui Fan School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorYu Xin, Yu Xin School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorLudong Qin, Ludong Qin School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorXiaoliang Zhou, Xiaoliang Zhou School of Electronic and Computer Engineering, Peking University, Shenzhen, ChinaSearch for more papers by this authorShengdong Zhang, Shengdong Zhang School of Electronic and Computer Engineering, Peking University, Shenzhen, China Institute of Microelectronics, Peking University, Beijing, China Active Matrix Display Beijing Engineering Research Center, Beijing, ChinaSearch for more papers by this author First published: 24 February 2021 https://doi.org/10.1002/sdtp.14519AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat No abstract is available for this article. Volume52, IssueS1International Conference on Display Technology (ICDT 2020)February 2021Pages 452-452 RelatedInformation

P‐1.12: Effects of Gate Voltage Pulse Width and Amplitude on Eliminating Persistent Photoconductivity in Amorphous InZnO TFTs

Thorough Elimination of Persistent Photoconduction in Amorphous InZnO Thin-Film Transistor via Dual-Gate Pulses

P‐1.15: Short Time Negative Gate Voltage Pulse to Eliminate Persistent Photoconductivity in Amorphous InZnO Thin Film Transistors

Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors

P‐1.9: Effect of Wavelength on Photoresponse Characteristics of Amorphous InZnO Thin Film Transistors

Tail-states induced semiconductor-toconductor like transition under sub-bandgap light excitation in the zinc-tin-oxide photothinfilm transistors

Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors

P‐1.5: High‐Voltage characteristics of Top‐Gate Amorphous InGaZnO Thin‐Film Transistors

Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Influence of White Light Illumination on the Performance of A-Igzo Thin Film Transistor under Positive Gate-Bias Stress

Influence of Temperature on the Illumination Time Dependent Photocurrent of Amorphous InZnO Thin-Film Transistors

Gate Insulator Influences on the Electrical Performance of Back-Channel-Etch Amorphous Zinc Tin Oxide (A-Zto) Thin Film Transistors

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Improved Photostability of Organic Thin Film Transistors with Tantalum Oxide/Poly(4-Vinylphenol) Double Gate Insulators

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs

P‐8: Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

Effective encapsulation of ZnO thin film transistors controlled by thermal energy

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs