Abstract:SID Symposium Digest of Technical PapersVolume 54, Issue S1 p. 848-848 Poster Session: P-11: Quantum Dots P-11.6: Efficient radiative recombination centers induced by trench defects in multiple-quantum wells of red InGaN light-emitting diodes Z.J. Pan, Z.J. Pan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.Z. Chen, Z.Z. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this authorY.Y. Chen, Y.Y. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorJ.X. Nie, J.X. Nie State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorC.H. Deng, C.H. Deng State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorH.D. Zhang, H.D. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorB.Y. Dong, B.Y. Dong State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX. Xin, X. Xin State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorW.H. Chen, W.H. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX.N. Kang, X.N. Kang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.W. Liang, Z.W. Liang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorQ. Wang, Q. Wang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorG.Y. Zhang, G.Y. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorB. Shen, B. Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this author Z.J. Pan, Z.J. Pan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.Z. Chen, Z.Z. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this authorY.Y. Chen, Y.Y. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorJ.X. Nie, J.X. Nie State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorC.H. Deng, C.H. Deng State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorH.D. Zhang, H.D. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorB.Y. Dong, B.Y. Dong State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX. Xin, X. Xin State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorW.H. Chen, W.H. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX.N. Kang, X.N. Kang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.W. Liang, Z.W. Liang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorQ. Wang, Q. Wang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorG.Y. Zhang, G.Y. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorB. Shen, B. Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this author First published: 03 August 2023 https://doi.org/10.1002/sdtp.16431AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat No abstract is available for this article. References 1 Koukitu, A.. et al Journal of Crystal Growth 170, 306-311 (1997) 2 Iida, D and Ohkawa, K. Semiconductor Science and Technology 37, 1 (2021) 3 Massabuau, F. C. P. et al Applied Physics Letters 101, 21(2012). 4 Bruckbauer, J. et al Applied Physics Letters, 98, 14(2011) Volume54, IssueS1International Conference on Display Technology 2023 (Volume 54, Issue S1)April 2023Pages 848-848 ReferencesRelatedInformation

P‐1.15: Short Time Negative Gate Voltage Pulse to Eliminate Persistent Photoconductivity in Amorphous InZnO Thin Film Transistors

P‐1.12: Effects of Gate Voltage Pulse Width and Amplitude on Eliminating Persistent Photoconductivity in Amorphous InZnO TFTs

P‐11.6: Efficient Radiative Recombination Centers Induced by Trench Defects in Multiple‐quantum Wells of Red InGaN Light‐emitting Diodes

P‐1.2: Erbium Doped Tin‐Oxide Thin‐Film Transistor

Thorough Elimination of Persistent Photoconduction in Amorphous InZnO Thin-Film Transistor via Dual-Gate Pulses

8.2: High Performance Oxide Thin Film Transistors Fabricated by Atomic Layer Deposition Process

23.1: Invited Paper: High Efficiency and Stability of Ink‐jet Printed Quantum Dot Light Emitting Diodes Via Dual Ionic Surface Passivation

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

P‐13.6: Design, Synthesis and OLEDs Application of a Novel Blue Phosphorescent Material with High Quantum Efficiency

38.4: High Performance Carbon Nanotube Thin Film Transistors for Miniߚled Driving

23.1: Invited Paper: Device Physics and Material Chemistry of Quantum‐dot Light‐emitting Didoes

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

8.1: <i>Invited Paper:</i> Fabrication and characterization of carbon nanotube thin films and transistors

Low Cost Universal High‐k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors

6.1: <i>Invited Paper:</i> Carbon Based Thin Film Transistors for High Drivability and High Flexibility

22.2: <i>Invited Paper:</i> Programmable integration of silicon nanowires into orderly and stretchable arrays for high performance thin film transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Gate Dielectric Treated by Self-Assembled Monolayers (SAMs) to Enhance the Performance of InSnZnO Thin-Film Transistors

Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors

High Reliability Tungsten-Doped Indium Zinc Oxide Thin Film Transistors for Display Applications

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing