Abstract:The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In-Ga-Zn-O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i) Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii) A sixth-generation (6G) process is demonstrated for 32″ and 37″ displays. (iii) An 8G sputtering apparatus and a sputtering target have been developed. (iv) The important effect of deep subgap states on illumination instability is revealed. (v) Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi) Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii) Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii) Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

P‐8: Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors

Photo-electrical Properties of Amorphous MgInO Thin Film Transistors

Ultraviolet detecting properties of amorphous MgInO thin film phototransistors

Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors

Nonlinear Photocurrent-Intensity Behavior Of Amorphous Inzno Thin Film Transistors

Persistent Photoconductivity in A-Igzo Thin Films Induced by Trapped Electrons and Metastable Donors

P‐1.9: Effect of Wavelength on Photoresponse Characteristics of Amorphous InZnO Thin Film Transistors

Influence of Temperature on the Illumination Time Dependent Photocurrent of Amorphous InZnO Thin-Film Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy

Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors

Photoresponse of InGaZnO thin film transistor to ultraviolet illumination

Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO 2 Gate Dielectric

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity.

P‐12: Exponential Dependence of Photocurrent on Reciprocal of Channel Length in Amorphous InZnO Thin‐Film Transistors with Short Channel

The Fabrication and Ultraviolet Detecting Properties of ZnMgO-based Thin Film Transistor by Laser Molecular Beam Epitaxy

Magnesium-doped indium oxide thin film transistors for ultraviolet detection

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Present status of amorphous In–Ga–Zn–O thin-film transistors

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance