Abstract:Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc. However, pure a-IGZO based photosensors only exhibit a UV light response with limited sensitivity performance. By utilizing in situ interfacial hydrogen doping, it is demonstrated that the a-IGZO TFTs with the Al2O3 dielectric deposited by plasma-enhanced atomic layer deposition at room temperature (RT) have excellent photosensing performance, such as a photoresponsivity of over 6 × 105 A W−1 and a light to dark current ratio up to 107. This is attributed to spontaneous interfacial hydrogen doping into the a-IGZO channel during sputtering deposition of a-IGZO on hydrogen-rich Al2O3 films, thus generating subgap states in the band gap of IGZO. Further, color pattern imaging was achieved by employing an array of the color distinguishable devices, and flexibility was demonstrated by fabricating the TFTs onto polymer substrates. Moreover, it is also found that both the RT and 150 °C Al2O3 a-IGZO TFTs exhibit typical light-stimulated synaptic behaviors, including excitatory post-synaptic current and pair-pules facilitation, etc., and the memory time of the synaptic devices can be easily modulated by the degree of the interfacial hydrogen doping.

P‐12: Exponential Dependence of Photocurrent on Reciprocal of Channel Length in Amorphous InZnO Thin‐Film Transistors with Short Channel

P‐1.9: Effect of Wavelength on Photoresponse Characteristics of Amorphous InZnO Thin Film Transistors

Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors

Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors

Influence of Temperature on the Illumination Time Dependent Photocurrent of Amorphous InZnO Thin-Film Transistors

Nonlinear Photocurrent-Intensity Behavior Of Amorphous Inzno Thin Film Transistors

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

Thorough Elimination of Persistent Photoconduction in Amorphous InZnO Thin-Film Transistor via Dual-Gate Pulses

Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels*

17‐1: Persistent Photoconductivity Suppression in Amorphous Oxide Thin‐Film Transistors with Double‐Stacked Channel Layers

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Study on ZnO micron channel length thin film transistors using different metal electrodes

P‐8: Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors

P‐45: Effect of Ar / O2 Flow Ratio During Sputtering of InZnO Active Layer on Photocurrent and Responsivity Characteristics of Amorphous InZnO Thin Film Transistors

A comprehensive study of short channel effects in organic field-effect transistors

Photo-electrical Properties of Amorphous MgInO Thin Film Transistors

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Light Response Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistors Via in Situ Interfacial Hydrogen Doping Modulation

P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched A‐igzo TFTs

Solution Processed Amorphous ZnSnO Thin-Film Phototransistors

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels