Abstract:Amorphous indium gallium zinc oxide (IGZO) is the most suitable material choice for optoelectronic devices such as thin film transistor (TFT). However, usually, the physical properties of IGZO are of concern rather than the preparation process, which will complicate the control of the main properties of the material. To obtain a simple method of controlling IGZO properties, different proportions of mixed gases of oxygen and argon were added in the process of preparing thin films by pulsed laser deposition (PLD) for studying the fluence of atmosphere on the growth of IGZO. The structure and components of the film are characterized by X-ray diffraction (XRD), which confirmed the amorphous structure. A red-shift of the absorption peak in range of 450–850 nm was generated with the increase in argon concentration. Meanwhile, the transmission spectra showed that the transmittance of the material was lower than 80% in the range of 450–850 nm. Then, different target samples have a wide photoluminescence band at 200–800 nm. Oxygen vacancy defects were considered to be closely related to the photoluminescence behavior. The smallest surface roughness of the films prepared under 50% Ar and 50% O2 and the largest in 100% Ar are proved by atom force microstructure (AFM). Importantly, the greater difference in electrical properties reflects the sensitivity of different oxygen and argon concentrations to material effects. The carrier concentration can be adjusted from 1.08 × 1011 to 1.33 × 1016 by this method. Finally, the IGZO achieved in this work was used in a transistor, which reflected good diode characteristics.

P‐45: Effect of Ar / O2 Flow Ratio During Sputtering of InZnO Active Layer on Photocurrent and Responsivity Characteristics of Amorphous InZnO Thin Film Transistors

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor

P‐1.9: Effect of Wavelength on Photoresponse Characteristics of Amorphous InZnO Thin Film Transistors

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors

Influence of Temperature on the Illumination Time Dependent Photocurrent of Amorphous InZnO Thin-Film Transistors

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process

Influence of Argon Flow on Optic-electronic Performance of Aluminum Doped Zinc Oxide Thin Films

Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors

Stoichiometry control of sputtered zinc oxide films by adjusting Ar/O 2 gas ratios as electron transport layers for efficient planar perovskite solar cells

P‐12: Exponential Dependence of Photocurrent on Reciprocal of Channel Length in Amorphous InZnO Thin‐Film Transistors with Short Channel

Nonlinear Photocurrent-Intensity Behavior Of Amorphous Inzno Thin Film Transistors