Abstract:Bottom‐gate thin‐film transistors (TFTs) with ITO‐stabilized ZnO channel layers were successfully fabricated by co‐sputtering of ZnO target and ITO target. We investigate the effects of the post‐deposition thermal annealing temperature on the defects inside of the ITO‐stabilized ZnO thin film and on the electrical performance of ITO‐stabilized ZnO TFTs. The beneficial effect of various annealing temperature appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films indicated by photoluminescence analysis. ITO‐stabilized ZnO thin film with the annealing temperature of 300°C exhibited less intense defect emission peaks due to reduction in the number of vacancies and interstitials via filling the oxygen vacancies with O2, and diffusion of zinc interstitial to exact sites (VZn) of the system. Furthermore, We systematically investigated the impact of various annealing temperature on their performance characteristics. It was found that ITO‐stabilized ZnO TFT with annealing temperature of 300°C exhibited fairly high electrical characteristics, especially with a saturation field‐effect mobility of 27.4 cm2V−1s−1 and the threshold voltage as low as −0.64 V. The implied correlation between the post‐deposition thermal treatment and the characteristics of a transistor was investigated and demonstrated by photoluminescence analysis.

Influence of Temperature on the Illumination Time Dependent Photocurrent of Amorphous InZnO Thin-Film Transistors

Nonlinear Photocurrent-Intensity Behavior Of Amorphous Inzno Thin Film Transistors

P‐1.9: Effect of Wavelength on Photoresponse Characteristics of Amorphous InZnO Thin Film Transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors

P‐12: Exponential Dependence of Photocurrent on Reciprocal of Channel Length in Amorphous InZnO Thin‐Film Transistors with Short Channel

Effects of Wavelength and Geometrical Condition on Photosensitivity of Self-Aligned Top-Gate Amorphous InZnO Thin Film Transistors

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

P‐8: Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors

Stability of Amorphous Inalzno Thin-Film Transistors

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Persistent Photoconductivity in A-Igzo Thin Films Induced by Trapped Electrons and Metastable Donors

Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.

Thorough Elimination of Persistent Photoconduction in Amorphous InZnO Thin-Film Transistor via Dual-Gate Pulses

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors

P‐45: Effect of Ar / O2 Flow Ratio During Sputtering of InZnO Active Layer on Photocurrent and Responsivity Characteristics of Amorphous InZnO Thin Film Transistors

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors