Abstract:This study investigates the effect of oxygen plasma treatment on the surface morphology, electrical properties, and stability of amorphous graphene quantum dots (GQDs)-modulated InGaZnO (IGZO) thin-film transistors (TFTs) prepared by all-solution method. The weak threshold voltage shifts ( of the oxygen plasma-treated GQDs-IGZO TFTs under positive bias stress (PBS), negative bias stress (NBS), positive bias illumination stress (PBIS), and negative bias illumination stress (NBIS) show a significant improvement of the bias-induced instability. Based on the energy band diagrams, this work demonstrates that O and H2O+ are formed in the back channel under PBS and NBS conditions in addition to ionized oxygen vacancy (V defects at the GQDs–IGZO/ZrOx interface, leading to the gate bias instability, which can be effectively suppressed by the oxygen plasma treatment to improve the stability of the device. From the experimental results, it can be seen that the electrical properties, such as field effect mobility ( , on-/off-current ratio ( / , and subthreshold fluctuations, are significantly improved by the passivation of interfacial trap density and bulk trap defects by oxygen plasma treatment. To confirm the potential applications of IGZO-TFTs in logic circuits, inverter based on GQDs-IGZO/ZrOx has been integrated, demonstrating good dynamic response characteristics and narrow transition width. Low-frequency noise (LFN) analyses of TFTs have revealed that mobility fluctuations are the main source of noise. As a result, it can be concluded that the facile oxygen plasma treatment strategy is a promising technique to optimize device performance and has demonstrated potential applications in preparing GQDs-IGZO TFTs with high performance.

Effect of Oxygen Plasma Treatment on the Performance of Recessed AlGaN/GaN Schottky Barrier Diodes

Improved Schottky Barrier Characteristics for AlInN/GaN Diodes by Oxygen Plasma Treatment

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

Investigating the effect of O2 plasma treatment on the operational characteristics of schottky-gate AlGaN/GaN HEMT

Effect of Oxygen Plasma Treatment on AlGaN Schottky Contacts

Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma Treatment

Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Leakage Reduction of Quasi-Vertical GaN Schottky Barrier Diode with Post Oxygen Plasma Treatment

Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiN<sub><i>x</i></sub>/PEALD-AlN Dual Gate Dielectric and <i>In-Situ</i> H<sub>2</sub>(15%)/N<sub>2</sub>(85%) Plasma Pretreatment

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode*

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Improvement on Leakage Current for High Al-content AlGaN Schottky Diode by Fluoride-based Plasma Treatment

Effective Suppression of Current Collapse in AlGaN/GaN HEMT with N2O Plasma Treatment followed by High Temperature Annealing in N2 Ambience