Abstract:GaN-based high electron mobility transistors (HEMTs) have exhibited great application prospects in power and radio frequency devices, thanks to the superior properties of GaN. Despite the significant commercialization progress, the reliability of GaN-based HEMTs remains a challenge. This work experimentally investigates the time-dependent degradation of Mg-doped GaN/AlN superlattice HEMTs under both OFF-state and SEMI-ON-state bias conditions and proposes that GaN/AlN superlattices as a barrier can solve the Vth instability issues of GaN HEMTs under OFF-state and SEMI-ON-state bias conditions. On the one hand, in the SEMI-ON-state, the hot electron effect leads to the degradation of Ig, gm,max, and Id,sat to varying degrees. However, the as-prepared GaN-based HEMTs exhibit excellent Vth stability (almost no change) under hot electron injection, on the account of the excellent two-dimensional electron gas confinement in the GaN/AlN superlattice structure. On the other hand, in the OFF-state, positive Vth shift (about 0.12 V) is induced by the hole emission in the GaN/AlN superlattice structure under reverse bias stress. In addition, the stress-induced destruction of MgO gate dielectric gives rise to the gate leakage, which increases by 2 orders of magnitude and triggers an irreversible degradation (about 10%) of the gm,max. These results are expected to provide a solution to the Vth instability of GaN HEMTs.

Investigating Two-Stage Degradation of Threshold Voltage Induced by Off-State Stress in AlGaN/GaN HEMTs

Investigation on the Threshold Voltage Instability Mechanism of P-Gan Gate AlGaN/GaN HEMTs under High-Temperature Reverse Bias Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

Characterization of Different Trap States in AlGaN/GaN MIS-HEMTs under High Reverse Gate Stress

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Degradation under High-Field Stress and Gate Stress of AlGaN/GaN HEMTs

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

Observation of Threshold Voltage Instabilities in Algan/Gan Mis Hemts

Degradation Induced by Holes in Si3N4/AlGaN/GaN MIS HEMTs under Off-State Stress with UV Light.

The Degradation Mechanism of an AlGaN/GaN High Electron Mobility Transistor under Step-Stress

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Different Gate Current Degradation Mechanisms in AlGaN/GaN High Electron Mobility Transistors

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Degradation Mechanism of Enhancement-Mode Algan/Gan Hemts Using Fluorine Ion Implantation under the On-State Gate Overdrive Stress

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Electrical Degradations of P-Gan HEMT under High Off-state Bias Stress with Negative Gate Voltage

Negative Bias-Induced Threshold Voltage Instability Andzener/interface Trapping Mechanism in GaN-based MIS-HEMTs