Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications (Invited).

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Absorption and Scattering Limits of Integrated Photonics in the Visible Spectrum

Ultra‐Low Loss SiN Edge Coupler for III‐V/SiN Hybrid Integration

Anneal-free ultra-low loss silicon nitride integrated photonics

Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Ultra-silicon-rich Nitride Based Devices for High Nonlinear Figure of Merit Photonics Applications

Ultra-low loss waveguide platform in silicon photonics

Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

Ultra-low loss silicon nitride becomes even cooler

Low-Loss Silicon Platform for Broadband Mid-Infrared Photonics