Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications

Xingchen Ji,Michal Lipson

2022-01-01

Abstract:Si3N4 has attracted extensive interest because of its wide applications in the field of biophotonics, telecommunications, nonlinear optics, and sensing. Here, we focus on exploiting ultra-low loss Si3N4 for on-chip delay line and frequency comb generation. (C) 2022 The Author(s)

What problem does this paper attempt to address?

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications (Invited).

Xingchen Ji,Michal Lipson

DOI: https://doi.org/10.1364/ofc.2022.th1d.1

2022-01-01

Abstract:Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> has attracted extensive interest because of its wide applications in the field of biophotonics, telecommunications, nonlinear optics, and sensing. Here, we focus on exploiting ultra-low loss Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> for on-chip delay line and frequency comb generation. © 2022 The Author(s)
High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Xuguang Zhang,Yuxin Liang,Yujun Chen,Bitao Shen,Jiahui Huang,Chenghao Lao,Yichen Wu,Zhihui Li,Dapeng Liu,Haowen Shu,Weiwei Hu,Xingjun Wang,Naidi Cui,Lin Chang

DOI: https://doi.org/10.1063/5.0221409

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15x106, corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging.
Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Xingchen Ji,Yoshitomo Okawachi,Andres Gil-Molina,Mateus Corato-Zanarella,Samantha Roberts,Alexander L. Gaeta,Michal Lipson

DOI: https://doi.org/10.1002/lpor.202200544

2023-01-01

Laser & Photonics Review

Abstract:The fabrication processes of silicon nitride (Si3N4) photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, it is shown that propagation loss as low as 0.42 dB cm(-1) can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By postprocessing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, propagation losses down to 0.28 dB cm(-1) and 0.06 dB cm(-1), respectively, are achieved. These low losses are comparable to the conventional devices using high temperature, high-stress LPCVD films. The dispersion of the devices is also tuned, and it is proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs, and narrow-linewidth laser are demonstrated. This work demonstrates the feasibility of scalable photonic systems based on foundries.
Efficient mass manufacturing of high-density, ultra-low-loss Si_3N_4 photonic integrated circuits

Xinru Ji,Rui Ning Wang,Yang Liu,Johann Riemensberger,Zheru Qiu,Tobias Kippenberg

DOI: https://doi.org/10.1364/optica.529673

IF: 10.4

2024-10-19

Optica

Abstract:Xinru Ji, Rui Ning Wang, Yang Liu, Johann Riemensberger, Zheru Qiu, Tobias J. Kippenberg Silicon nitride (S i _3 N _4) photonic integrated circuits (PICs) offer significant ... [Optica 11, 1397-1407 (2024)]

optics
Ultra-low loss silicon nitride becomes even cooler

Dawn T H Tan,Xavier X Chia

DOI: https://doi.org/10.1038/s41377-024-01576-1

2024-09-05

Abstract:Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.
Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Shuai Liu,Yuheng Zhang,Abdulkarim Hariri,Abdur-Raheem Al-Hallak,Zheshen Zhang

2024-11-04

Abstract:Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si$_3$N$_4$ processes have been extensively developed, many nonlinear and quantum optics applications require the use of thick Si$_3$N$_4$ films with engineered dispersion, high mode confinement, and low optical loss. However, high tensile stress in thick Si$_3$N$_4$ films often leads to cracking, making the fabrication challenging to meet these requirements. In this work, we present a robust and reliable fabrication method for ultra-low-loss, dispersion-engineered Si$_3$N$_4$ PICs using amorphous silicon (a-Si) hardmask etching. This approach enables smooth etching of thick Si$_3$N$_4$ waveguides while ensuring long-term storage of crack-free Si$_3$N$_4$ wafers. We achieve intrinsic quality factors ($Q_i$) as high as $25.6 \times 10^6$, corresponding to a propagation loss of 1.6 dB/m. The introduction of a-Si hardmask etching and novel crack-isolation trenches offers notable advantages, including high etching selectivity, long-term wafer storage, high yield, and full compatibility with existing well-developed silicon-based semiconductor processes. We demonstrate frequency comb generation in the fabricated microring resonators, showcasing the platform's potential for applications in optical communication, nonlinear optics, metrology, and spectroscopy. This stable and efficient fabrication method offers high performance with significantly reduced fabrication complexity, representing a remarkable advancement toward mass production of Si$_3$N$_4$ PICs for a wide spectrum of applications.

Optics,Applied Physics
Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Xinru Ji,Rui Ning Wang,Yang Liu,Johann Riemensberger,Zheru Qiu,Tobias J. Kippenberg

2024-06-20

Abstract:Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high effective nonlinearity through tight optical confinement, thick stoichiometric Si$_3$N$_4$ films are indispensable. However, when using low-pressure chemical vapor deposition (LPCVD) to achieve high optical material transparency, Si$_3$N$_4$ films exhibit large tensile stress on the order of GPa. Methods for crack prevention are therefore essential. The photonic Damascene process has addressed this issue, attaining record low loss Si$_3$N$_4$ PICs, but it lacks control of the waveguide height. Conversely, precise waveguide dimension and ultra-low loss have been achieved with subtractive processing, but this method is not compatible with mass production due to the use of electron beam lithography. To date, an outstanding challenge is to attain both lithographic precision and ultra-low loss in high confinement Si$_3$N$_4$ PICs that are compatible with large-scale foundry manufacturing. Here, we present a single-step deposited, DUV-based subtractive method for producing wafer-scale ultra-low loss Si$_3$N$_4$ PICs that harmonize these necessities. By employing deep etching of densely distributed, interconnected trenches into the substrate, we effectively mitigate the tensile stress in the Si$_3$N$_4$ layer, enabling direct deposition of thick films without cracking and substantially prolonged storage duration. Lastly, we identify ultraviolet (UV) radiation-induced damage that can be remedied through rapid thermal annealing. Collectively, we develop ultra-low loss Si$_3$N$_4$ microresonators and 0.5 m-long spiral waveguides with losses down to 1.4 dB/m at 1550 nm with high production yield.

Optics,Applied Physics
Anneal-free ultra-low loss silicon nitride integrated photonics

Debapam Bose,Mark W. Harrington,Andrei Isichenko,Kaikai Liu,Jiawei Wang,Zachary L. Newman,Daniel J. Blumenthal

DOI: https://doi.org/10.1038/s41377-024-01503-4

2024-02-17

Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Optics,Applied Physics
Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Xiaoyan Liu,Lin Han,Xiaoke Ruan,Tao Chu

DOI: https://doi.org/10.1364/OL.494537

IF: 3.6

2023-01-01

Optics Letters

Abstract:We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (< 0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wave-length range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer plat-form. The total interlayer coupler length was only 120 & mu;m.& COPY; 2023 Optica Publishing Group
Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/GROUP4.2019.8925811

2019-01-01

Abstract:Of late, the 2 μm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si3N4-SOI platform at the 2 μm waveband. The insertion loss of the Si-Si3N4 adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si3N4 waveguide propagation losses as low as 1.59 dB/cm have been achieved.
Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Houssein El Dirani,Laurene Youssef,Camille Petit-Etienne,Sebastien Kerdiles,Philippe Grosse,Christelle Monat,Erwine Pargon,Corrado Sciancalepore

DOI: https://doi.org/10.1364/OE.27.030726

2019-10-14

Abstract:Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si3N4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.
Absorption and Scattering Limits of Integrated Photonics in the Visible Spectrum

Mateus Corato-Zanarella,Xingchen Ji,Aseema Mohanty,Michal Lipson

DOI: https://doi.org/10.1364/oe.505892

IF: 3.8

2023-01-01

Optics Express

Abstract:Visible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film's deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform's fundamental limit. Here we demonstrate an ultra-low loss, high-confinement SiN platform that approaches the limits of absorption and scattering across the visible spectrum. Leveraging the sensitivity of microresonators to loss, we probe and discriminate each loss contribution with unparalleled sensitivity, and derive their fundamental limits and scaling laws as a function of wavelength, film properties and waveguide parameters. Through the design of the waveguide cross-section, we show how to approach the absorption limit of the platform, and demonstrate the lowest propagation losses in high-confinement SiN to date across the visible spectrum. We envision that our techniques for loss characterization and minimization will contribute to the development of large-scale, dense PICs that redefine the loss limits of integrated platforms across the electromagnetic spectrum.
Ultra‐Low Loss SiN Edge Coupler for III‐V/SiN Hybrid Integration

An He,Yiou Cui,Jinlong Xiang,Wenqi Wei,Zihao Wang,Ting Wang,Xuhan Guo,Yikai Su

DOI: https://doi.org/10.1002/lpor.202300100

2023-09-10

LASER & PHOTONICS REVIEWS

Abstract:Abstract Silicon photonics is becoming a competitive technology to settle the issues of power and speed in data centers and computing systems. However, the absence of an on‐chip light source restricts the wide and deep application of silicon photonics. Essentially, efficient edge coupling from a Si‐based III‐V laser to silicon photonic components remains the major obstacle for on‐chip integration. Here, two compact edge couplers with ultra‐low coupling loss and eased fabrication for the light transmission from a Si‐based III‐V laser to Si 3 N 4 waveguide are realized. An ultra‐low laser‐to‐chip coupling loss of only 1.175 dB for the butt coupling of a Si‐based InAs QD laser is experimentally demonstrated with high alignment tolerance. The strategies presented here provide a competitive solution for realizing ultra‐efficient integration of Si‐based light sources and silicon photonic components.
Damascene Process Development for Low-Loss Photonics Devices with Applications in Frequency Comb

Qiaoling Zhou,Yejia Jin,Shaonan Zheng,Xingyan Zhao,Yang Qiu,Lianxi Jia,Yuan Dong,Qize Zhong,Ting Hu

DOI: https://doi.org/10.3390/photonics11040375

IF: 2.536

2024-04-17

Photonics

Abstract:Silicon nitride (SiN) is emerging as a material of choice for photonic integrated circuits (PICs) due to its ultralow optical losses, absence of two-photon absorption in telecommunication bands, strong Kerr nonlinearity and high-power handling capability. These properties make SiN particularly well-suited for applications such as delay lines, chip-scale frequency combs and narrow-linewidth lasers, especially when implemented with thick SiN waveguides, which is achieved through low-pressure chemical vapor deposition (LPCVD). However, a significant challenge arises when the LPCVD SiN film thickness exceeds 300 nm on an 8-inch wafer, as this can result in cracking due to high stress. In this work, we successfully develop a damascene process to fabricate 800 nm-thick SiN photonics devices on an 8-inch wafer in a pilot line, overcoming cracking challenges. The resulting 2 × 2 multimode interference (MMI) coupler exhibits low excess loss (−0.1 dB) and imbalance (0.06 dB) at the wavelength of 1310 nm. Furthermore, the dispersion-engineered SiN micro-ring resonator exhibits a quality (Q) factor exceeding 1 × 106, enabling the generation of optical frequency combs. Our demonstration of photonics devices utilizing the photonics damascene process sets the stage for high-volume manufacturing and widespread deployment.

optics
Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Yaojing Zhang,Shuangyou Zhang,Toby Bi,Pascal Del'Haye

DOI: https://doi.org/10.1364/OE.503637

2023-12-04

Abstract:Silicon nitride (Si3N4) has been well established as an ultralow-loss material for integrated photonics, particularly for the generation of dissipative Kerr soliton frequency combs, enabling various applications for optical metrology, biological imaging, and coherent telecommunications. Typically, bright soliton generation in Si3N4 devices requires thick (>600 nm) films to fulfill the condition of anomalous dispersion at telecom wavelengths. However, thick films of ultralow-loss Si3N4 (>400 nm) often suffer from high internal stress, leading to cracks. As an alternative approach, thin Si3N4 films (<400 nm) provide the advantage of one-step deposition and are widely applied for commercial use. Here, we provide insights into engineering an integrated Si3N4 structure that achieves optimal effective nonlinearity and maintains a compact footprint. A comparative analysis of Si3N4 resonators with varying waveguide thicknesses is conducted and reveals that a 400-nm thin Si3N4 film emerges as a promising solution that strikes a balance among the aforementioned criteria. Based on a commercially available 400-nm Si3N4 film, we experimentally demonstrate the generation of low-noise coherent dark pulses with a repetition rate of 25 GHz in a multimode Si3N4 resonator. The compact spiral-shaped resonator has a footprint of 0.28 mm2 with a high-quality factor of 4 × 106. Our demonstrated dark combs with mode spacings of tens of GHz have applications in microwave photonics, optical spectroscopy, and telecommunication systems.
Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Doris K. T. Ng,Hongwei Gao,Peng Xing,George F. R. Chen,Xavier X. Chia,Yanmei Cao,Kenny Y. K. Ong,Dawn T. H. Tan

DOI: https://doi.org/10.1038/s41598-022-09227-4

IF: 4.6

2022-03-28

Scientific Reports

Abstract:Abstract Ultra-silicon-rich nitride with refractive indices ~ 3 possesses high nonlinear refractive index—100× higher than stoichiometric silicon nitride and presents absence of two-photon absorption, making it attractive to be used in nonlinear integrated optics at telecommunications wavelengths. Despite its excellent nonlinear properties, ultra-silicon-rich nitride photonics devices reported so far still have fairly low quality factors of $$\sim 6\times {10}^{4}$$ ∼ 6 × 10 4 , which could be mainly attributed by the material absorption bonds. Here, we report low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si 8 N) with lower material absorption bonds, and ~ 2.5× higher quality factors compared to ultra-silicon-rich nitride conventionally prepared with silane-based chemistry. This material is found to be highly rich in silicon with refractive indices of ~ 3.12 at telecommunications wavelengths and atomic concentration ratio Si:N of ~ 8:1. The material morphology, surface roughness and binding energies are also investigated. Optically, the material absorption bonds are quantified and show an overall reduction. Ring resonators fabricated exhibit improved intrinsic quality factors $$\sim 1.5\times {10}^{5}$$ ∼ 1.5 × 10 5 , ~ 2.5× higher compared to conventional silane-based ultra-silicon-rich nitride films. This enhanced quality factor from plasma-deposited dichlorosilane-based ultra-silicon-rich nitride signifies better photonics device performance using these films. A pathway has been opened up for further improved device performance of ultra-silicon-rich nitride photonics devices at material level tailored by choice of different chemistries.

multidisciplinary sciences
Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths

Gioele Piccoli,Matteo Sanna,Massimo Borghi,Lorenzo Pavesi,Mher Ghulinyan

DOI: https://doi.org/10.1364/OME.463940

2022-06-09

Abstract:The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a low-loss material platform based on high-refractive index silicon oxynitride (\ce{SiON}), which offers significant characteristics for linear and non-linear optics applications in a wide range of red/near-infrared wavelengths. The demonstrated propagation loss $<1.5$~dB/cm for visible wavelengths enables the realization of long and intricate circuitry for photon manipulations, as well as the realization of high quality factor resonators. In addition, the proposed \ce{SiON} shows a high nonlinear coefficient of $10^{-19}$~m$^2$/W, improving the strength of nonlinear effects exploitable for on-chip photon generation schemes.

Optics
Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuit

Zhichao Ye,Haiyan Jia,Zhangjun Huang,Chen Shen,Jinbao Long,Baoqi Shi,Yi-Han Luo,Lan Gao,Wei Sun,Hairun Guo,Jijun He,Junqiu Liu

DOI: https://doi.org/10.1364/PRJ.486379

2023-03-09

Abstract:The foundry development of integrated photonics has revolutionized today's optical interconnect and datacenters. Over the last decade, we have witnessed the rising of silicon nitride (Si$_3$N$_4$) integrated photonics, which is currently transferring from laboratory research to foundry manufacturing. The development and transition are triggered by the ultimate need of low optical loss offered by Si$_3$N$_4$, which is beyond the reach of silicon and III-V semiconductors. Combined with modest Kerr nonlinearity, tight optical confinement and dispersion engineering, Si$_3$N$_4$ has today become the leading platform for linear and Kerr nonlinear photonics, and has enabled chip-scale lasers featuring ultralow noise on par with table-top fiber lasers. However, so far all the reported fabrication processes of tight-confinement, dispersion-engineered Si$_3$N$_4$ photonic integrated circuit (PIC) with optical loss down to few dB/m have only been developed on 4-inch or smaller wafers. Yet, to transfer these processes to established CMOS foundries that typically operate 6-inch or even larger wafers, challenges remain. In this work, we demonstrate the first foundry-standard fabrication process of Si$_3$N$_4$ PIC with only 2.6 dB/m loss, thickness above 800 nm, and near 100% fabrication yield on 6-inch wafers. Such thick and ultralow-loss Si$_3$N$_4$ PIC enables low-threshold generation of soliton frequency combs. Merging with advanced heterogeneous integration, active ultralow-loss Si$_3$N$_4$ integrated photonics could pave an avenue to addressing future demands in our increasingly information-driven society.

Optics,Applied Physics

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications (Invited).

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Efficient mass manufacturing of high-density, ultra-low-loss Si_3N_4 photonic integrated circuits

Ultra-low loss silicon nitride becomes even cooler

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Anneal-free ultra-low loss silicon nitride integrated photonics

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Absorption and Scattering Limits of Integrated Photonics in the Visible Spectrum

Ultra‐Low Loss SiN Edge Coupler for III‐V/SiN Hybrid Integration

Damascene Process Development for Low-Loss Photonics Devices with Applications in Frequency Comb

Geometry optimization for dark soliton combs in thin multimode silicon nitride microresonators

Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths

Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuit