Ultra-low loss silicon nitride becomes even cooler

Dawn T H Tan,Xavier X Chia

DOI: https://doi.org/10.1038/s41377-024-01576-1

2024-09-05

Abstract:Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.

What problem does this paper attempt to address?

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
Anneal-free ultra-low loss silicon nitride integrated photonics

Debapam Bose,Mark W. Harrington,Andrei Isichenko,Kaikai Liu,Jiawei Wang,Zachary L. Newman,Daniel J. Blumenthal

DOI: https://doi.org/10.1038/s41377-024-01503-4

2024-02-17

Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Optics,Applied Physics
Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications

Xingchen Ji,Michal Lipson

2022-01-01

Abstract:Si3N4 has attracted extensive interest because of its wide applications in the field of biophotonics, telecommunications, nonlinear optics, and sensing. Here, we focus on exploiting ultra-low loss Si3N4 for on-chip delay line and frequency comb generation. (C) 2022 The Author(s)
Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Xingchen Ji,Yoshitomo Okawachi,Andres Gil-Molina,Mateus Corato-Zanarella,Samantha Roberts,Alexander L. Gaeta,Michal Lipson

DOI: https://doi.org/10.1002/lpor.202200544

2023-01-01

Laser & Photonics Review

Abstract:The fabrication processes of silicon nitride (Si3N4) photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, it is shown that propagation loss as low as 0.42 dB cm(-1) can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By postprocessing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, propagation losses down to 0.28 dB cm(-1) and 0.06 dB cm(-1), respectively, are achieved. These low losses are comparable to the conventional devices using high temperature, high-stress LPCVD films. The dispersion of the devices is also tuned, and it is proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs, and narrow-linewidth laser are demonstrated. This work demonstrates the feasibility of scalable photonic systems based on foundries.
Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications (Invited).

Xingchen Ji,Michal Lipson

DOI: https://doi.org/10.1364/ofc.2022.th1d.1

2022-01-01

Abstract:Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> has attracted extensive interest because of its wide applications in the field of biophotonics, telecommunications, nonlinear optics, and sensing. Here, we focus on exploiting ultra-low loss Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> for on-chip delay line and frequency comb generation. © 2022 The Author(s)
300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Xuguang Zhang,Yuxin Liang,Yujun Chen,Bitao Shen,Jiahui Huang,Chenghao Lao,Yichen Wu,Zhihui Li,Dapeng Liu,Haowen Shu,Weiwei Hu,Xingjun Wang,Naidi Cui,Lin Chang

DOI: https://doi.org/10.1063/5.0221409

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15x106, corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging.
High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Han L. K.,Bhat M.,Yan J.,Wristers D.,Kwong D. L.

DOI: https://doi.org/10.1557/proc-387-221

1995-01-01

Abstract:This paper reports on the formation of high quality ultrathin oxynitride gate dielectric by in-situ rapid thermal multiprocessing. Four such gate dielectrics are discussed here; (i) in-situ NO-annealed SiO2, (ii) N2O- or NO- or O2-grown bottom oxide/RTCVD SiO2/thermal oxide, (iii) N2O-grown bottom oxide/Si3N4/N2O-oxide (ONO) and (iv) N2O-grown bottom oxide/RTCVD SiO2/N2O-oxide. Results show that capacitors with NO-based oxynitride gate dielectrics, stacked oxynitride gate dielectrics with varying quality of bottom oxide (O2/N2O/NO), and the ONO structures show high endurance to interface degradation, low defect-density and high charge-to-breakdown compared to thermal oxide. The N2O-last reoxidation step used in the stacked dielectrics and ONO structures is seen to suppress charge trapping and interface state generation under Fowler-Nordheim injection. The stacked oxynitride gate dielectrics also show excellent MOSFET performance in terms of transconductance and mobility. While the current drivability and mobilities are found to be comparable to thermal oxide for N-channel MOSFET’s, the hot-carrier immunity of N-channel MOSFET’s with the N2O-oxide/CVD-SiO2/N2O-oxide gate dielectrics is found to be significantly enhanced over that of conventional thermal oxide.
Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Houssein El Dirani,Laurene Youssef,Camille Petit-Etienne,Sebastien Kerdiles,Philippe Grosse,Christelle Monat,Erwine Pargon,Corrado Sciancalepore

DOI: https://doi.org/10.1364/OE.27.030726

2019-10-14

Abstract:Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si3N4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.
Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Xinru Ji,Rui Ning Wang,Yang Liu,Johann Riemensberger,Zheru Qiu,Tobias J. Kippenberg

2024-06-20

Abstract:Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high effective nonlinearity through tight optical confinement, thick stoichiometric Si$_3$N$_4$ films are indispensable. However, when using low-pressure chemical vapor deposition (LPCVD) to achieve high optical material transparency, Si$_3$N$_4$ films exhibit large tensile stress on the order of GPa. Methods for crack prevention are therefore essential. The photonic Damascene process has addressed this issue, attaining record low loss Si$_3$N$_4$ PICs, but it lacks control of the waveguide height. Conversely, precise waveguide dimension and ultra-low loss have been achieved with subtractive processing, but this method is not compatible with mass production due to the use of electron beam lithography. To date, an outstanding challenge is to attain both lithographic precision and ultra-low loss in high confinement Si$_3$N$_4$ PICs that are compatible with large-scale foundry manufacturing. Here, we present a single-step deposited, DUV-based subtractive method for producing wafer-scale ultra-low loss Si$_3$N$_4$ PICs that harmonize these necessities. By employing deep etching of densely distributed, interconnected trenches into the substrate, we effectively mitigate the tensile stress in the Si$_3$N$_4$ layer, enabling direct deposition of thick films without cracking and substantially prolonged storage duration. Lastly, we identify ultraviolet (UV) radiation-induced damage that can be remedied through rapid thermal annealing. Collectively, we develop ultra-low loss Si$_3$N$_4$ microresonators and 0.5 m-long spiral waveguides with losses down to 1.4 dB/m at 1550 nm with high production yield.

Optics,Applied Physics
Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Doris K. T. Ng,Hongwei Gao,Peng Xing,George F. R. Chen,Xavier X. Chia,Yanmei Cao,Kenny Y. K. Ong,Dawn T. H. Tan

DOI: https://doi.org/10.1038/s41598-022-09227-4

IF: 4.6

2022-03-28

Scientific Reports

Abstract:Abstract Ultra-silicon-rich nitride with refractive indices ~ 3 possesses high nonlinear refractive index—100× higher than stoichiometric silicon nitride and presents absence of two-photon absorption, making it attractive to be used in nonlinear integrated optics at telecommunications wavelengths. Despite its excellent nonlinear properties, ultra-silicon-rich nitride photonics devices reported so far still have fairly low quality factors of $$\sim 6\times {10}^{4}$$ ∼ 6 × 10 4 , which could be mainly attributed by the material absorption bonds. Here, we report low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si 8 N) with lower material absorption bonds, and ~ 2.5× higher quality factors compared to ultra-silicon-rich nitride conventionally prepared with silane-based chemistry. This material is found to be highly rich in silicon with refractive indices of ~ 3.12 at telecommunications wavelengths and atomic concentration ratio Si:N of ~ 8:1. The material morphology, surface roughness and binding energies are also investigated. Optically, the material absorption bonds are quantified and show an overall reduction. Ring resonators fabricated exhibit improved intrinsic quality factors $$\sim 1.5\times {10}^{5}$$ ∼ 1.5 × 10 5 , ~ 2.5× higher compared to conventional silane-based ultra-silicon-rich nitride films. This enhanced quality factor from plasma-deposited dichlorosilane-based ultra-silicon-rich nitride signifies better photonics device performance using these films. A pathway has been opened up for further improved device performance of ultra-silicon-rich nitride photonics devices at material level tailored by choice of different chemistries.

multidisciplinary sciences
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Benjamin Richstein,Lena Hellmich,Joachim Knoch

DOI: https://doi.org/10.3390/micro1020017

2021-11-21

Micro

Abstract:Problems with doping in nanoscale devices or low temperature applications are widely known. Our approach to replace the degenerate doping in source/drain (S/D)-contacts is silicon nitride interface engineering. We measured Schottky diodes and MOSFETs with very thin silicon nitride layers in between silicon and metal. Al/SiN/p-Si diodes show Fermi level depinning with increasing SiN thickness. The diode fabricated with rapid thermal nitridation at 900 ∘C reaches the theoretical value of the Schottky barrier to the conduction band ΦSB,n=0.2 eV. As a result, the contact resistivity decreases and the ambipolar behavior can be suppressed. Schottky barrier MOSFETs with depinned S/D-contacts consisting of a thin silicon nitride layer and contact metals with different work functions are fabricated to demonstrate unipolar behavior. We presented n-type behavior with Al and p-type behavior with Co on samples which only distinguish by the contact metal. Thus, the thermally grown SiN layers are a useful method suppress Fermi level pinning and enable reconfigurable contacts by choosing an appropriate metal.
Efficient mass manufacturing of high-density, ultra-low-loss Si_3N_4 photonic integrated circuits

Xinru Ji,Rui Ning Wang,Yang Liu,Johann Riemensberger,Zheru Qiu,Tobias Kippenberg

DOI: https://doi.org/10.1364/optica.529673

IF: 10.4

2024-10-19

Optica

Abstract:Xinru Ji, Rui Ning Wang, Yang Liu, Johann Riemensberger, Zheru Qiu, Tobias J. Kippenberg Silicon nitride (S i _3 N _4) photonic integrated circuits (PICs) offer significant ... [Optica 11, 1397-1407 (2024)]

optics
Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics

B Rangarajan,A Y Kovalgin,K Wörhoff,J Schmitz,B. Rangarajan,A. Y. Kovalgin,K. Wörhoff,J. Schmitz

DOI: https://doi.org/10.1364/ol.38.000941

IF: 3.6

2013-03-13

Optics Letters

Abstract:The growth of silicon oxynitride thin films applying remote inductively coupled, plasma-enhanced chemical vapor deposition is optimized toward high optical quality at a deposition temperature as low as 150°C. Propagation losses of 0.5±0.05 dB/cm, 1.6±0.2 dB/cm, and 0.6±0.06 dB/cm are measured on as-deposited waveguides for wavelengths of 1300, 1550, and 1600 nm, respectively. Films were deposited onto a 0.25 μm technology mixed-signal CMOS chip to show the application perspective for three-dimensional integrated optoelectronic chips.

optics
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

G. Lucovsky,H. Niimi,Y. Wu,C. R. Parker,J. R. Hauser

DOI: https://doi.org/10.1116/1.581291

1998-05-01

Abstract:This article addresses several aspects of nitrogen atom (N atom) incorporation into ultrathin gate oxides including: (i) monolayer incorporation of N atoms at the Si–SiO2 interfaces to reduce tunneling currents and improve device reliability; and (ii) the incorporation of silicon nitride films into stacked oxide–nitride (ON) gate dielectrics to (a) increase the capacitance in ultrathin dielectrics without decreasing film thickness, and (b) suppress boron atom (B atom) diffusion from p+ polycrystalline Si gate electrodes through the dielectric layer to the Si substrate channel region. The results of this article demonstrate that these N-atom spatial distributions can be accomplished by low thermal budget, single wafer processing which includes (i) low-temperature (300 °C) plasma assisted oxidation, nitridation, and/or deposition to achieve the desired N-atom incorporation, followed by (ii) low thermal budget (30 s at 900 °C) rapid thermal annealing to promote chemical and structural bulk and interface relaxation.

physics, applied,materials science, coatings & films
Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/GROUP4.2019.8925811

2019-01-01

Abstract:Of late, the 2 μm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si3N4-SOI platform at the 2 μm waveband. The insertion loss of the Si-Si3N4 adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si3N4 waveguide propagation losses as low as 1.59 dB/cm have been achieved.
Void-free upper cladding deposition process for low-loss integrated silicon nitride photonics

Alexandr M. Mumlyakov,Nikita Yu. Dmitriev,Maksim V. Shibalov,Ivan A. Filippov,Igor V. Trofimov,Andrei N. Danilin,Valery E. Lobanov,Igor A. Bilenko,and Michael A. Tarkhov

DOI: https://doi.org/10.1103/physrevapplied.22.054027

IF: 4.6

2024-11-13

Physical Review Applied

Abstract:Silicon nitride ( ) is one of the most promising integrated photonics platforms, offering ultralow loss, significant Kerr nonlinearity, and extremely high integration capability. However, in the C band exhibits normal material group-velocity ... [Phys. Rev. Applied 22, 054027] Published Tue Nov 12, 2024

physics, applied
Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Zidong Cai,Xuelin Yang,Cheng Ma,Zhenghao Chen,Danshuo Liu,Liwen Sang,Fujun Xu,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1021/acsaelm.2c00747

IF: 4.494

2022-01-01

ACS Applied Electronic Materials

Abstract:An ultralow-supersaturation Al pretreatment approach has been proposed to achieve low threading dislocation (TD) density and low radio frequency (RF) loss GaN/AlN layer stacks on Si substrates. By employing this approach, the Al-Si liquid alloy is eliminated, and a sharp AlN/Si interface is obtained. In addition, the size of the AlN nucleation islands is enlarged and thus the TDs generated from the coalescence of the islands are reduced even at a low growth temperature. Owing to the low TD density AlN layer, a 1.5 mu m crack-free GaN layer can be achieved directly on this AlN layer and no transition layers are required. The full width at half maximum values are as low as 390 and 440 arcsec for the GaN (002) and (102) diffractions, respectively. Owing to a low growth temperature and short growth time, the RF loss of the epi-stack is as low as 0.29 dB/mm at 10 GHz. This work shows great potential for the fabrication of high-quality and low-loss GaN-on-Si RF devices.
A Theoretical Sub-0.1 Db Loss Single Mode Fiber-To-Chip Edge Coupler for Silicon Nitride Waveguides

Di Wu,Wei Yan,Yucong Yang,Xiaoyi Song,Zixuan Wei,Jun Qin,Longjiang Deng,Lei Bi

DOI: https://doi.org/10.3390/photonics10030231

IF: 2.536

2023-01-01

Photonics

Abstract:A low loss optical interconnection between optical fibers and photonic integrated circuits is critical for high performance photonic systems. In the past decade, spot size converters, subwavelength waveguide grating (SWG) structures, and different refractive index materials have been applied to allow efficient coupling between the fiber and the photonic chips. However, it is still challenging to achieve low-loss coupling when interfacing high index contrast waveguides such as SiN with SMF-28 fibers. In this work, we report a multilayer edge-coupler using SiOxN materials with different indices to allow for efficient edge coupling between SMF-28 fiber and SiN single mode waveguides. A coupling loss of 0.068 dB for the TM mode was achieved theoretically at a 1550 nm wavelength, with a 1 dB alignment tolerance offset of 2.4 μm.
Ultra-low loss waveguide platform in silicon photonics

Arijit Bera,Yisbel Marin,Mikko Harjanne,Matteo Cherchi,Timo Aalto

DOI: https://doi.org/10.1117/12.2610022

2022-03-05

Abstract:Silicon photonics is the most promising technology for applications ranging from large-bandwidth, low power consumption datacom transceivers, to wearable health monitoring devices, or optical data-bus for quantum processors. To bring silicon PIC based products to the market, ultra-low loss waveguides would be preferred. In the conventional submicron silicon platforms, higher propagation loss (in the order of ~1 dB/cm) induced by the roughness of the etched sidewalls, as well as higher fiber-to-waveguide coupling loss due to its sub-micron dimensions impose challenges for its deployment in many products. VTT’s thick-SOI technology offers a promising alternative, owing to its lower propagation loss (~0.1 dB/cm), reduced polarization sensitivity, and capacity to handle higher optical power without exciting nonlinear losses. Its micron-scale cross-section enables efficient edge coupling. Exploiting its ultra-low loss, we have demonstrated unprecedented level of integration such as, a 40-channel array waveguide grating (AWG) based mux/de-mux, or a Faraday rotator based on silicon spirals, without employing any magneto-optic material. Now we reduced the propagation loss further, down to record-low 4 dB/m, by controlled annealing of waveguides in 100% pure H2 environment. In our optimized, MPW-compatible annealing process, the atomic mobility of Si smoothens the scallops from etching, without causing any structural deformation of the waveguides. This substantially reduced loss enabled us to develop ultra-high Q ring resonators on our thick-SOI platform, as well as sidewall smoothening for the active components, thereby making our platform a bedrock for the emerging applications such as, quantum computing, biosensors, and 3D imaging.

Ultra-low loss silicon nitride becomes even cooler

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Anneal-free ultra-low loss silicon nitride integrated photonics

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications (Invited).

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Efficient mass manufacturing of high-density, ultra-low-loss Si_3N_4 photonic integrated circuits

Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Void-free upper cladding deposition process for low-loss integrated silicon nitride photonics

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

A Theoretical Sub-0.1 Db Loss Single Mode Fiber-To-Chip Edge Coupler for Silicon Nitride Waveguides

Ultra-low loss waveguide platform in silicon photonics