Abstract:The advances in novel low-loss "on insulator" integrated photonics platforms beyond silicon, such as thin-film LiNbO3, LiTaO3, GaP and BaTiO3 have demonstrated major potential across a wide range of applications, due to their unique electro-optical or nonlinear optical properties. This has heralded novel devices, ranging from low-voltage and high-speed modulators to parametric amplifiers. For such photonic integrated circuits, a low-loss SiO2 cladding layer is a key element, serving as a passivation layer for the waveguides and enabling efficient fiber-to-chip coupling. However, numerous novel ferroelectric or III-V "on insulator" platforms have low tolerances for process temperature. This prohibits using high-temperature anneals to remove hydrogen, a common impurity that is inherent to ordinary chemical vapor deposited SiO2 and causes significant optical loss in the near infrared. Here, we satisfy the dichotomy of a low-loss wafer scale manufactured SiO2 cladding and low processing temperature. Inspired by the manufacturing of optical fibers, we introduce a hydrogen-free, low-loss SiO2 cladding that is deposited at low temperatures (300 degrees Celsius) by using SiCl4 and O2 as precursors in inductively coupled plasma-enhanced chemical vapor deposition (ICPCVD). By replacing hydrogenous silicon precursors (e.g. SiH4) with SiCl4, the deposited film is inherently free from residual hydrogen. The process temperature is compatible with the "on insulator" platforms and CMOS electronic integrated circuits. We demonstrate a wide low-loss window that covers all telecommunication bands from 1260 nm to 1625 nm. We achieve a < 2.5 dB/m waveguide loss at 1550 nm, comparable with 1200 degree Celsius annealed films. Our SiCl4 process provides a key future cladding for all recently emerged "on-insulator" photonics platforms, that is low cost, scalable in manufacturing, and directly foundry compatible.

Void-free upper cladding deposition process for low-loss integrated silicon nitride photonics

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Anneal-free ultra-low loss silicon nitride integrated photonics

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Enhanced photonics devices based on low temperature plasma-deposited dichlorosilane-based ultra-silicon-rich nitride (Si8N)

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Low-Loss Silicon Platform for Broadband Mid-Infrared Photonics

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths

Foundry compatible, efficient wafer-scale manufacturing of ultra-low loss, high-density Si$_3$N$_4$ photonic integrated circuits

Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate

High-performance lasers for fully integrated silicon nitride photonics

Low-loss silicon nitride photonic ICs for single-photon applications

Photonic Damascene Process for Integrated High-Q Microresonator Based Nonlinear Photonics

Foundry manufacturing of tight-confinement, dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuit

Hydrogen-free low-temperature silica for next generation integrated photonics