Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

Advances in mobility enhancement of ITZO thin-film transistors: a review

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor

Influence of Channel Layer and Passivation Layer on the Stability of Amorphous InGaZnO Thin Film Transistors.

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers

Improvements in passivation effect of amorphous InGaZnO thin film transistors