Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

Influence of Channel Layer and Passivation Layer on the Stability of Amorphous InGaZnO Thin Film Transistors.

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

Influence of Channel Layer Thickness on the Stability of Amorphous Indium Zinc Oxide Thin Film Transistors

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

Improvements in passivation effect of amorphous InGaZnO thin film transistors

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Effect of reactive sputtered SiO x passivation layer on the stability of InGaZnO thin film transistors

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

P.18: Effects of Interface and Bulk States on the Stability of Amorphous InGaZnO Thin Film Transistors under Gate Bias and Temperature Stress

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Enhanced Stability of Thin Film Transistors with Double-Stacked Amorphous IWO/IWO:N Channel Layer

Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering

Stability of Amorphous Inalzno Thin-Film Transistors

Extraction of Density-of-states in Amorphous InGaZnO Thin-Film Transistors from Temperature Stress Studies

Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers