Abstract:Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

Hybrid Integration of Lithium Niobate on Insulator Waveguide and AlGaInAs Laser

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Monolithic Integration of a Lithium Niobate Microresonator with a Free-Standing Waveguide Using Femtosecond Laser Assisted Ion Beam Writing.

Monolithic Integration of a High-Quality Factor Lithium Niobate Microresonator with a Free-Standing Membrane Waveguide Using Femtosecond Laser Assisted Ion Beam Writing (FLAIBW)

1.9 μm hybrid silicon/iii-v semiconductor laser

On-chip erbium-doped lithium niobate waveguide amplifiers

Hybrid Integrated Laser Emission Module with DFB Laser Diode and Thin-Film LiNbO3 Modulator

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Silicon rich nitride-lithium niobate on insulator platform for photonics integrated circuits

Heterogeneous integration of an on-chip Nd:YAG whispering gallery mode laser with a lithium-niobate-on-insulator platform

Fabrication of a multifunctional photonic integrated chip on lithium niobate on insulator using femtosecond laser assisted chemo-mechanical polish

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Electrically driven compact hybrid lithium niobate microring laser

Integrated Lithium Niobate Platform for Nonlinear Optics and Electro-Optic Applications

On-chip erbium-doped lithium niobate microcavity laser

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Novel integration technique for silicon/III-V hybrid laser

High-efficiency and low-loss thin film lithium niobate modulator

An Ultra-High-Q Lithium Niobate Microresonator Integrated with a Silicon Nitride Waveguide in the Vertical Configuration for Evanescent Light Coupling

Monolithic integration of embedded III-V lasers on SOI

Integrated Lithium Niobate Microring Resonators Fabricated With 515 nm Femtosecond Laser Ablation