Abstract:In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal-oxide semiconductor (CMOS) fabrication lines, limiting its scalability. Silicon carbide (SiC) is an emerging material platform with a high refractive index, a large non-linear Kerr coefficient, and a promising candidate for heterogeneous integration with LN photonics. Current approaches of SiC/LN integration require transfer-bonding techniques, which are time-consuming, expensive, and lack precision in layer thickness. Here we show that amorphous silicon carbide (a-SiC), deposited using inductively coupled plasma enhanced chemical vapor deposition (ICPCVD) at low temperatures (< 165 C), can be conveniently integrated with LiNbO3 and processed to form high-performance photonics. Most importantly, the fabrication only involves a standard, silicon-compatible, reactive ion etching step and leaves the LiNbO3 intact, hence its compatibility with standard foundry processes. As a proof-of-principle, we fabricated waveguides and ring resonators on the developed a-SiC/LN platform and achieved intrinsic quality factors higher than 106,000 and resonance electro-optic tunability of 3.4 pm/V with 3 mm tuning length. We showcase the possibility of dense integration by fabricating and testing ring resonators with 40um radius without a noticeable loss penalty. Our platform offers a CMOS-compatible and scalable approach for implementation of future fast electro-optic modulators and reconfigurable photonic circuits as well as nonlinear processes which can benefit from involving both second and third-order nonlinearities.

Heterogeneous integration of an on-chip Nd:YAG whispering gallery mode laser with a lithium-niobate-on-insulator platform

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Monolithic Integration of a Lithium Niobate Microresonator with a Free-Standing Waveguide Using Femtosecond Laser Assisted Ion Beam Writing.

Heterogeneous integration of III–V semiconductor lasers on thin-film lithium niobite platform by wafer bonding

Photonic-integrated circuits and components using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Heterogeneously integrated MIR silicon photonics

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Integrated resonant electro-optic comb enabled by platform-agnostic laser integration

Hybrid Integration of Lithium Niobate on Insulator Waveguide and AlGaInAs Laser

Photonic integrated circuits fabricated using quantum well intermixing

Configurable Integration of On‐Chip Quantum Dot Lasers and Subwavelength Plasmonic Waveguides

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate

Waveguide-integrated van der Waals heterostructure photodetector on a lithium niobate on insulator platform

On-chip erbium-doped lithium niobate microring lasers

Hybrid integration of silicon photonic devices on lithium niobate for optomechanical wavelength conversion

On-chip Lithium Niobate Heterogeneous Photonic Crystal Nanocavity Laser

On-chip erbium-doped lithium niobate microcavity laser