The Temperature Effect on the Photoluminescence of Porous Silicon Films Obtained from an N-Type Silicon Substrate
Salah Rahmouni,Hani boubekri,Hacene Bendjeffal,Hadjer Mamine,Noureddine Boukhenoufa,Issam Tifouti,Brahim Mariane,Nihal Nasri,Lilia Zighed,Radhouane Chtourou
DOI: https://doi.org/10.1007/s12633-024-02996-9
IF: 3.4
2024-04-26
Silicon
Abstract:Porous silicon (PSi) is an intriguing material with unusual optical and electrical properties, and researching its temperature-dependent photoluminescence (PL) qualities might provide important insights into its behavior. In this respect, we conducted a thorough investigation of the evolution of the PL band as a function of the temperature in order to elucidate luminescence properties using temperature-dependent photoluminescence (PL) measurement. An electrochemical approach was used to create the porous structures. Two well-known PL emission peaks were identified at 663 nm and 818 nm; the broad emission peak at 663 nm was attributed to surface states in porous materials. Based on the intensity evolution with measurement temperature, the current work suggests two distinct nonradiative recombination processes. The influence of surface conditions can be attributed to the thermal extinguishing behavior in the low-temperature region between 10 and 60K. Nevertheless, it is possible to attribute nonradiative recombination activities to thermal escape throughout the upper-temperature range, specifically from 60 to 300 K. It is well acknowledged that gaining a comprehensive understanding of the faults is highly advantageous when considering the application of porous silicon layers in optoelectronic or other devices.
materials science, multidisciplinary,chemistry, physical