MOCVD Growth of ZrN Thin Films on GaN/Si Templates and the Effect of Substrate Temperature on Growth Mode, Stress State, and Electrical Properties
Qingqing Chen,Shaoyan Yang,Chengming Li,Weizhen Yao,Xianglin Liu,Huidan Niu,Rui Yang,Huijie Li,Hongyuan Wei,Lianshan Wang,Zhanguo Wang
DOI: https://doi.org/10.1088/1361-6463/ac8205
2022-07-19
Abstract:Zirconium nitride (ZrN) is considered as a candidate for contact metal and barrier layer in ohmic contacts for GaN-based devices for its superior electrical conductivity and corrosion resistance. This paper reported ZrN films deposited on GaN/Si templates using Metal-Organic Chemical Vapor Deposition (MOCVD) for the first time, and analyzed the effect of substrate temperature (Ts) on its growth mode, film stress, as well as electrical properties. Firstly, the surface morphology and film roughness of the resultant ZrN epilayers were investigated, which were found to vary dramatically with Ts. Then, a temperature-dominated crystal formation process is reasonably proposed, revealing the transfer from the island to layer growth mode and the augmentation of the growth rate of ZrN with elevated Ts. Stress information was obtained from the position of XRD diffraction peaks, which indicates large in-plane lattice stretching in ZrN film and the presence of compressive stress in the GaN/Si template. The stress states can be related to island merger and thermal mismatch between ZrN and GaN, which proved satisfyingly advantageous in preventing the GaN layer from breaking during the subsequent preparation procedure. In addition, XPS surface and interface analyses were applied to identify the chemical state as well as the atomic content of the ZrN film, which also indicate a relatively clear interface exists between the ZrN epilayer and GaN/Si template. Furthermore, Hall tests proved the resistivity of ZrN thin film can reach a minimum of 2.28 10-4 ·cm, owing to the grain boundary chaining and flat film surface at high temperatures. Overall, it appears to have a promising prospects for its application in the contact layer and diffusion barrier of ohmic contact in GaN-based devices.