Abstract:Pb(Zr,Ti)O-3 (PZT) is a well known ferroelectric material for nonvolatile memory applications. However, interfacial diffusion and reaction are the main issues when PZT films were deposited directly on silicon. One way to overcome this obstacle is to deposit a barrier layer between PZT and Si. In this work, Pt/PbZr0.53Ti0.47O3/LaAlO3/Si structure has been fabricated to study the electric properties. PbZr0.53Ti0.47O3 films with 300 nm thickness and LaAlO3 buffer layers with 30 nm thickness were prepared by pulsed laser deposition technique on n-type Si (100) substrates at 650 degreesC and 450 degreesC, respectively. X-ray diffraction shows that polycrystalline PbZr0.53Ti0.47O3 film was formed on amorphous LaAlO3 buffer layer. The Auger electron spectrometer demonstrates that LaAlO3 buffer layer effectively prevent Si and Ti, Ph interdiffusion between PZT and Si substrates. For the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si Structure, the current density-voltage measurement showed a typical leakage current density of about 10(-7) A/cm(2) at 8 V applied voltage. Furthermore, it has been measured that the Pt/PbZr0.53Ti0.47O3/LaAlO3/Si heterostructures exhibit ferroelectric switching properties, showing a memory window as large as 2 V under a ramp rate of 200 mV/s at I MHz.

Characterization Of Pb(Zr0.53ti0.47)O-3 Films On Gan

Characterization of Pb(Zr 0.53 Ti 0.47 )O 3 Films on GaN

Fabrication and Characterization of Metalferroelectric-GAN Structures

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Electric Properties of Pt/PbZr 0.53 Ti 0.47 O 3 /laalo 3 /si Structure

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Ferroelectric Properties of Pb (ta0.05zr0.48ti0.47)o3 Films Prepared by Pulsed Laser Deposition

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Studies of Metal–ferroelectric–gan Structures

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Pulsed Laser Deposition and Characterization of Ferroelectric Pb(Zr,Ti)O-3 Thin Films on Silicon-On-Insulator Substrates

Effect of Lanio3 Buffer Layer on Ferroelectric Properties of Ba(Zr,Ti)O-3 Thin Films

Characterization of Pb(Zr,Ti)O-3 Thin-Films on Soi Prepared by Excimer-Laser Deposition

Properties of PbZr<sub>x</sub>Ti<sub>1−x</sub>O<sub>3</sub>/CeO<sub>2</sub>/SiO<sub>2</sub>/Si structure

Temperature-dependent optical and surface electrical properties of Pb(Zr_0.3Ti_0.7)O_3 /p-GaN film

Epitaxial Pb(Zr0.53ti0.47)O-3/Lanio3 Heterostructures on Single Crystal Substrates

Characteristics of Pb(Zr, Ti)O3 Thin Films Deposited on Pt(Si) at Low Substrate Temperature by Using Ba(Mg1/3Ta2/3)O3 As Buffer Layer

High Piezoelectricity of Pb(Zr,Ti)O3-based Ternary Compound Thin Films on Silicon Substrates

Silicon-Based Pbtio3/Pb(Zr,Ti)O-3/Pbtio3 Sandwich Structure

Effect of LaNiO3 interlayer on electrical properties of Pb(Zr0.52Ti0.48)O3/LaNiO3/Pb(Zr0.52Ti0.48)O3 composite films