Abstract:A two-dimensional electron gas (2DEG) in (Al, Ga) N/GaN heterojunction (AlGaN/GaN) is a key factor that affects the performance of GaN-based high electron mobility transistor (HEMT) devices. Previous studies have shown that the ferroelectric polarization can effectively control the density of the 2DEG at the AlGaN/GaN interface; however, the correlation between two-dimensional distribution of ferroelectric polarization (i.e., ferroelectric domains) and its ability to confine the 2DEG is yet to be investigated. In this work, ferroelectric domain-induced modulation of the 2DEG in the AlGaN/GaN heterostructure was characterized using microscopic as well as local transport measurement techniques. The results suggest direct evidence for effective ferroelectric domain engineering in GaN HEMTs, as predicted by theoretical calculations. Additionally, a prototype device was fabricated, where gating was realized by utilizing the polarization of the ferroelectric domain. Considering the nonvolatile and reconfigurable advantages of a ferroelectric domain, the E-mode, D-mode, and even multi-channel output characteristics were realized in the same device by artificially engineered ferroelectric domain structures. These results offer a promising solution for the contradiction between the 2DEG density and gate controllability in GaN HEMTs, thereby showing a great potential of GaN radio frequency devices with further scaled gate lengths down to a few nanometers in the future.

Ferroelectric Effect and Equivalent Polarization Charge Model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Comparative Study of Characteristics and Interface States with and Without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates

Fabrication and Characterization of Metalferroelectric-GAN Structures

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Studies on Al-doped ZnO Thin-Film Transistors with Pb(Zr0.3Ti0.7)O3 Gate Insulator

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Modulation Effect of Lead Zirconate Titanate for Zinc Oxide Channel Resistance in Ferroelectric Field Effect Transistor

A High Performance Normally-Off AlGaN/GaN Split-Gate Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) Using Piezo Neutralization Technique

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure

Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

Studies of Metal–ferroelectric–gan Structures

Polarization-Assisted Acceptor Ionization in E-Mode GaN P-Fet on 650-V E-mode P-Gan Gate HEMT (EPH) Platform

Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices