Abstract:III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse (gate-lag), which inevitably limits the device performances and reliability. Here, we fabricate an optimized AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT), by using HfZrOx (HZO) as a gate dielectric, that can improve the interfacial and transport properties. Compared to the conventional high permittivity (high-kappa) gate dielectric HfO2 which has attracted wide attention in recent years, the concentrations of interface traps and the inside fixed oxide defects are obviously reduced by using high quality HZO layer. Through the dielectric engineering of HZO, the MOS-HEMT with HZO dielectric shows an enhanced DC output performance with an increase of 54% at the optimal working condition, which is indeed much higher than that of the HfO2 MOS-HEMT (40%). And the HZO MOS-HEMT exhibits a higher I-on/I-off ratio of 10(6), an excellent subthreshold swing (SS) of 85 mV/decade, and a higher voltage swing (GVS). The gate leakage is reduced by nearly 8 orders of magnitude compared to the conventional unpassivated HEMTs (conv. HEMT) at the gate voltage of -5 V. These results are mainly caused by the replacement of the low-height Schottky barrier (SB) and the reduction of interface traps density. In order to further investigate the interfacial and electric properties of HZO MOS-HEMT, the dynamic gate/drain voltage and high-frequency capacitance-voltage (C-V) measurements are both applied. Remarkably, no measurable current collapse and C-V hysteresis are clearly observed, showing the enhanced interfacial and electric performances of the MOS-HEMT with dielectric engineering of HZO.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

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The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiN x Passivation

Polarization Effects in Ferroelectric Gate AlGaN/GaN High Electron Mobility Transistors

A computational approach to optimize the linearity in dual-gate InAlGaN/AlN/GaN HEMTs

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

RF Linearity and Improved Transconductance of ScAlN/GaN HEMT with Novel Inverse L-shaped Gate Structure

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Ferroelectric Effect and Equivalent Polarization Charge Model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

Ferroelectric domain modulated AlGaN/GaN field effect transistor

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure

A High Performance Normally-Off AlGaN/GaN Split-Gate Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) Using Piezo Neutralization Technique

Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructure

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Impact of Al X Ga 1-X N Barrier Thickness and Al Composition on Electrical Properties of Ferroelectric HfZrO/Al 2 O 3 /algan/gan MFSHEMTs