Abstract:Different symmetry phases are identified in PbZr0.6Ti0.4O3 ferroelectric thin films as function of the strain introduced by CaF2, SrTiO3 and PMN‐PT substrates. Measured strain‐temperature paths are successfully described by a multi‐domain LGD‐model that predicts the symmetry phases and phase transitions, and the observed enhanced piezoelectricity in one of the phases. Lead based bulk piezoelectric materials, e.g., PbZrxTi1‐xO3 (PZT), are widely used in electromechanical applications, sensors, and transducers, for which optimally performing thin films are needed. The results of a multi‐domain Landau–Ginzberg‐Devonshire model applicable to clamped ferroelectric thin films are used to predict the lattice symmetry and properties of clamped PZT thin films on different substrates. Guided by the thermal strain phase diagrams that are produced by this model, experimentally structural transitions are observed. These can be related to changes of the piezoelectric properties in PZT(x = 0.6) thin films that are grown on CaF2, SrTiO3 (STO) and 70% PbMg1/3Nb2/3O3‐30% PbTiO3 (PMN‐PT) substrates by pulsed laser deposition. Through temperature en field dependent in situ X‐ray reciprocal space mapping (RSMs) and piezoelectric force microscopy (PFM), the low symmetry monoclinic phase and polarization rotation are observed in the film on STO and can be linked to the measured enhanced properties. The study identifies a monoclinic ‐rhombohedral MC‐MA‐R crystal symmetry path as the polarization rotation mechanism. The films on CaF2 and PMN‐PT remain in the same symmetry phase up to the ferroelectric‐paraelectric phase transition, as predicted. These results support the validity of the multi‐domain model which provides the possibility to predict the behavior of clamped, piezoelectric PZT thin films, and design films with enhanced properties.

Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

Epitaxial Growth of Full Range of Compositions of (111) PbZr1-xTixO3 on GaN

Structural and Electrical Properties of Pb(Zr,Ti)O3 Grown on (0001) GaN Using a Double PbTiO3∕PbO Bridge Layer

Characterization of Pb(Zr 0.53 Ti 0.47 )O 3 Films on GaN

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Characterization Of Pb(Zr0.53ti0.47)O-3 Films On Gan

Growth of relaxor ferroelectric crystal 0.93Pb(Zn1/3Nb2/3)O3–0.07PbTiO3 by directional solidification

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films

Progress In Lead-Based Ferroelectric And Antiferroelectric Single Crystals: Composition Modification, Crystal Growth And Properties

Growth of large-sized relaxor ferroelectric PZN-PT single crystals by modified flux growth method

Bridgman Growth of Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals Using Different Seeds

Investigation Of Pb(Zr,Ti)O-3/Gan Heterostructures By Scanning Probe Microscopy

Study on the Growth of Integrated Dielectric Films on GaN Substrates

Epitaxial Growth of ZrO 2 on GaN by MOMBE for High Dielectric Material Applications

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Enhanced Dielectric Nonlinearity in Epitaxial Pb0.92la0.08zr0.52ti0.48o3 Thin Films

Nucleation Mechanism for Epitaxial Growth of GaN on Patterned Sapphire Substrates

Investigation on the Structural Properties of Gan Films Grown on La0.3sr1.7altao6 Substrates

Fabrication and Characterization of Metalferroelectric-GAN Structures

Preparation and Study on Epitaxial Pb(Zr0.52ti0.48)O-3 Ferroelectric Films on Different Substrates

Strain coupling of ferroelastic domains and misfit dislocations in [101]-oriented ferroelectric PbTiO3 films