Abstract:Recently,ZnO has being paid more attention because of potential applications in ultraviolet light(emitting) diode and laser diode.However,it is very difficult to fabricate p-type ZnO due to serious self-compensation effect,which results in no great progress in p-n homojunction diodes.ZnO heterojunction as another route has been paid attention except the effort on the fabrication of p-ZnO.One attractive heterojunction is ZnO/GaN heterojunction because of similar crystal structure and small lattice mismatch of 1.8%.However,the emission of GaN plays a dominant role in the electroluminescence spectra of ZnO/GaN heterojunction light emitting diode.The main reason was analyzed,the new heterojunction was designed by introduced into MgO i-layer by plasma-enhanced molecular beam epitaxy(P-MBE),and n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was fabricated.The electrical properties of each layer were determined by Hall effect measurement.The ZnO shows n-type conductivity with the carrier concentration of 10~(18) cm~(3) and the resistivity of 0.6 Ω·cm.The hole concentration of p-GaN is about 10~(17) cm~(-3).I-V curve show rectification diode behavior in this heterojunction and have turn-on voltage of 4 V.The bright ultraviolet electroluminescence at 382 nm was observed in the room temperature electroluminescence spectrum.It is concluded that this emission is originated from the(recombination) in ZnO layer by comparing with photoluminescence spectra of ZnO and GaN.According to(Anderson) Model,it is proved that the injection of MgO layer can limit effectively electrons into p-GaN layer in this heterojunction due to very small electron affinity and wide energy band of MgO.It is very hopefull to (realize) the stimulated emission of ZnO using these heterojunctions by the improvement of(crystal) quality and the optimization of device structure.

Tuning Electronic Properties in Tin-Assisted N-Type Ε-Ga2o3:Zr Thin Films Via PLD for P-N Heterojunction

Synthesis of N-Type ZrO2 Doped Ε-Ga2o3 Thin Films by PLD and Fabrication of Schottky Diode

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes

Tin-assisted growth of ε-Ga 2 O 3 film and the fabrication of photodetectors on sapphire substrate by PLD

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped β-Ga2O3 thin films on sapphire substrates

Microstructure Evolution and Electrical Behaviors for High-Performance Cu2O/Zr-Doped β-Ga2O3 Heterojunction Diodes

P-Type Znte:Ga Nanowires: Controlled Doping And Optoelectronic Device Application

Influence of Ga Doping on Electrical Performance and Stability of ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Investigation of the electronic structure of two-dimensional GaN/Zr2CO2 hetero-junction: Type-II band alignment with tunable bandgap

N-Zno/i-mgo/p-gan Heterojunction Light-emitting Diodes

Epitaxial Growth of Full Range of Compositions of (111) PbZr1-xTixO3 on GaN

Structural and Electrical Properties of Single Crystalline Ga-Doped Zno Thin Films Grown by Molecular Beam Epitaxy

Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate