Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm

D.-Y. Cong,A. Martinez,K. Merghem,A. Ramdane,J.-G. Provost,M. Fischer,I. Krestnikov,A. Kovsh
DOI: https://doi.org/10.1063/1.2929384
IF: 4
2008-01-01
Applied Physics Letters
Abstract:The temperature dependence of microwave properties—relaxation frequency and Henry factor—of undoped and p-type doped ten InAs∕GaAs quantum-dot layer lasers is reported in the 20–80°C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40°C.
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