Abstract:With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four kinds of channel areas and a stack inverter chain are designed to investigate the SET in advanced 22 nm FD-SOI CMOS technology. A NAND chain is also designed and used for comparison with inverter chains. The sensitivities of diverse SET targets are characterized with different core voltages and heavy-ion tilts. Results showed that the inverter size and the driving current can dominate the occurrence and width distribution of transient pulses. Besides, heavy-ion strike angle, LET, and charge sharing can also affect the pulse width. Though a high LET can deposit adequate energy, the widest pulses are measured in low-LET 84 Kr ion irradiation, rather than in high-LET ions' irradiation, which are attributed to the pulse quenching effect and being investigated by Hspice simulation. The LET dependency and low voltage induced SET widening are all observed in irradiation tests and verified by circuit-level pulse injection. All of the SET sensitive targets are distinguished. The results are highly effective for the designers to suppress and correct the SET-oriented errors to achieve a radiation robust system.

SET Characterization of 130 Nm Flash-Based FPGA Device

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

Improved On-Chip Self-Triggered Single-Event Transient Measurement Circuit Design and Applications

Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping

Characterization of Single-Event Transients Induced by High LET Heavy Ions in 16 Nm Bulk FinFET Inverter Chains

Analysis of TID Failure Modes in SRAM-Based FPGA under Gamma-Ray and Focused Synchrotron X-Ray Irradiation

Characterization and Modeling of SET Generation Effects in CMOS Standard Logic Cells

Primary Single Event Effect Studies on Xilinx 28-Nm System-on-Chip (Soc)

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

A Universal Automatic On-Chip Measurement Of Fpga'S Internal Setup And Hold Times

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

SRAM based re-programmable FPGA for space applications

Pulse Quenching Effect Characterized by Inverter Chains under Heavy-ion Irradiation in 28-Nm CMOS Technology

A nanosecond level measurement method of pulse width based on FPGA

A continuous ultra-narrow impulse synchronizer using a monolithic field programmable gate array for fast deployment and scalability

Single Event Effect Detection and Simulation Analysis for an ASIC

Simulation of Program Characteristics of Nanocrystal Flash Memory Devices

Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501

Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission